Formation and decay mechanisms of electron–hole pairs in amorphous SiO[sub 2]

Uchino, T.; Takahashi, M.; Yoko, T.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1147
Academic Journal
We present theoretical evidence for the creation of an electron--hole pair at an edge-sharing SiO[SUB 4] site that is supposed to exist in α-SiO[SUB 2] as an intrinsic structural defect. The present electron--hole pair consists of a nonbridging oxygen hole center and an E' center, but these paramagnetic defects do not form a close pair but are separately located by over ∼4 Å. The subsequent decay mechanism along with the related radiolytic process is also discussed.


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