Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Fu, L.; v. d. Heijden, R. W.; Tan, H. H.; Jagadish, C.; Dao, L. V.; Gal, M.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1171
Academic Journal
The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/A1GaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO[SUB 2] and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO[SUB 2] layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD.


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