Role of atomic arrangements at interfaces on the phase control of epitaxial TiO[sub 2] films

Park, B. H.; Huang, J. Y.; Li, L. S.; Jia, Q. X.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1174
Academic Journal
Epitaxial rutile-TiO[SUB 2] and anatase-TiO[SUB 2] films were grown at 800°C on Al[SUB 2]O[SUB 3](1102) and LaAlO[SUB 3](001), respectively, using pulsed laser deposition. Both films showed high crystalline quality, evidenced by x-ray diffraction and high-resolution electron microscopy. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also deposited epitaxial rutile-TiO[SUB 2] and anatase-TiO[SUB 2] films on conductive RuO[SUB 2] and La[SUB 0.5]Sr[SUB 0.5]CoO[SUB 3] electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO[SUB 2] film grown on RuO[SUB 2] showed a very broad peak in the visible light region. An epitaxial anatase-TiO[SUB 2] film grown on La[SUB 0.5]Sr[SUB 0.5]CoO[SUB 3] showed a strong peak with a threshold energy of 3.05 eV.


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