Normal-incidence Ge quantum-dot photodetectors at 1.5 μm based on Si substrate

Tong, S.; Liu, J. L.; Wan, J.; Wang, Kang L.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1189
Academic Journal
Coherent Ge quantum dots embedded in Si spacing layers were grown on Si substrate by molecular-beam epitaxy in the Stranski-Krastanov mode. Photoluminescence measurement showed a Ge-dot-related peak at 1.46 μm. p-i-n photodiodes with the intrinsic layer containing Ge dots were fabricated, and current-voltage (I-V) measurement showed a low dark current density of 3 x 10[SUP -5] A/cm[SUP 2] at -1 V. A strong photoresponse at 1.3-1.52 μm originating from Ge dots was observed, and at normal incidence, an external quantum efficiency of 8% was achieved at -2.5 V.


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