TITLE

ZnRh[sub 2]O[sub 4]: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh[sup 3+] in a 4d[sup 6] configuration

AUTHOR(S)
Mizoguchi, Hiroshi; Hirano, Masahiro; Fujitsu, Satoru; Takeuchi, Tomonari; Ueda, Kazushige; Hosono, Hideo
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is demonstrated that a ZnRh[SUB 2]O[SUB 4] normal spinel with a band gap of ∼2.1 eV is a unique material as a p type wide-gap semiconductor. The electrical conductivity of the sputtered film was 0.7 S cm[SUP -1] at 300 K with no intentional doping. The electronic structure was investigated by photoemission and inverse photoemission measurements and indicated that the band gap is composed mainly of ligand field splitting of an octahedrally coordinated Rh[SUP 3+] octahedron between fully occupied t[SUP 6,SUB 2g] and empty e[SUP 0,SUB g] sets.
ACCESSION #
6112365

 

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