Hydrogen response mechanism of Pt–GaN Schottky diodes

Schalwig, J.; Mu¨ller, G.; Karrer, U.; Eickhoff, M.; Ambacher, O.; Stutzmann, M.; Go¨rgens, L.; Dollinger, G.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1222
Academic Journal
Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current-voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.


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