Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor

Kumakura, Kazuhide; Makimoto, Toshiki; Kobayashi, Naoki
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1225
Academic Journal
We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-10[SUP 17] cm[SUP -3]. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from -l0[SUP -5] to -10[SUP -4] A.


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