Negative differential resistance in scanning-tunneling spectroscopy of diamond films

Ma, D. D. D.; Wang, Y. G.; Lu, Li; Lee, C. S.; Lee, S. T.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1231
Academic Journal
Heavily boron-doped diamond film surfaces were investigated using ultra high-vacuum scanning tunneling microscopy. Negative differential resistance (NDR) was observed in the I--V curves measured from the diamond facets using scanning tunneling spectroscopy. NDR peaks with a peak-to-valley ratio as high as 90 were observed in about half of the I--V curves measured at room temperature. The NDR phenomenon is attributed to the existence of localized electron states on the diamond film surfaces. The I--V curves obtained at the diamond grain boundaries showed the characteristics of the graphite phase, while those acquired from the grain facets manifested obvious rectification in accordance with the wide band gap of diamond.


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