TITLE

Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor

AUTHOR(S)
Hanbicki, A. T.; Jonker, B. T.; Itskos, G.; Kioseoglou, G.; Petrou, A.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1240
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology.
ACCESSION #
6112354

 

Related Articles

  • Electron spin injection into GaAs from ferromagnetic contacts in remanence. Gerhardt, N. C.; Hövel, S.; Brenner, C.; Hofmann, M. R.; Lo, F.-Y.; Reuter, D.; Wieck, A. D.; Schuster, E.; Keune, W.; Westerholt, K. // Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p032502 

    We demonstrate electrical spin injection into a (GaIn)As/GaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a Fe/Tb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular...

  • Publisher's Note: 'High optical polarization ratio from semipolar ([formula]) blue-green InGaN/GaN light-emitting diodes' [Appl. Phys. Lett. 99, 051109 (2011)]. Zhao, Yuji; Tanaka, Shinichi; Yan, Qimin; Huang, Chia-Yen; Chung, Roy B.; Pan, Chih-Chien; Fujito, Kenji; Feezell, Daniel; Van de Walle, Chris G.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji // Applied Physics Letters;11/28/2011, Vol. 99 Issue 22, p229902 

    A correction to the article "High optical polarization ratio from semipolar formula blue-green InGaN/GaN light-emitting diodes" that was published online in the November 29, 2011 issue is presented.

  • Midinfrared emission from InGaN/GaN-based light-emitting diodes. Hofstetter, Daniel; Faist, Jérome; Bour, David P. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1495 

    Midinfrared emission on violet, blue, and green InGaN light-emitting diodes has been measured between 85 and 300 K for various injection current densities. We found that the diode with the highest In composition in the active region had the shortest midinfrared emission wavelength and vice...

  • Biomaterials: Super-reflective fish skin.  // Nature;10/25/2012, Vol. 490 Issue 7421, p449 

    The article reports on the study conducted by Nicholas Roberts of the University of Bristol, which indicates that the skin of certain fishes including Atlantic herring and sprat can reflect light without polarizing it, making them good for optical devices such as light-emitting diodes.

  • Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures. Young, D. K.; Johnston-Halperin, E.; Awschalom, D. D.; Ohno, Y.; Ohno, H. // Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1598 

    A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically biased (Ga, Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an...

  • Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes. Kolbe, Tim; Knauer, Arne; Chua, Chris; Yang, Zhihong; Kueller, Viola; Einfeldt, Sven; Vogt, Patrick; Johnson, Noble M.; Weyers, Markus; Kneissl, Michael // Applied Physics Letters;12/26/2011, Vol. 99 Issue 26, p261105 

    The temperature and strain dependence of the polarization of the in-plane electroluminescence of (0001) orientated (In)(Al)GaN multiple quantum well light emitting diodes in the ultraviolet spectral range has been investigated. For light emitting diodes with emission wavelength shorter than 300...

  • Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes. Li, X.; Ni, X.; Lee, J.; Wu, M.; Özgür, Ü.; Morkoç, H.; Paskova, T.; Mulholland, G.; Evans, K. R. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p121107 

    We investigated the internal quantum efficiency (IQE) and the relative external quantum efficiency (EQE) of m-plane InGaN light emitting diodes (LEDs) grown on m-plane freestanding GaN emitting at ∼400 nm for current densities up to 2500 A/cm2. IQE values extracted from intensity and...

  • Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting. Liang Zhang; Jing Hua Teng; Soo Jin Chua; Fitzgerald, Eugene A. // Applied Physics Letters;12/28/2009, Vol. 95 Issue 26, p261110 

    Surface emitting linearly polarized InGaN/GaN light emitting diode (LED) is demonstrated using a subwavelength metallic nanograting. The aluminum based grating with a period of 150 nm is fabricated on top of the p-contact layer in a conventional InGaN LED structure grown on (0001) oriented...

  • Doping and optimal electron spin polarization in n-ZnMnSe for quantum-dot spin-injection light-emitting diodes. Löffler, W.; Höpcke, N.; Kalt, H.; Li, S. F.; Grün, M.; Hetterich, M. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052113 

    Utilizing the diluted magnetic semiconductor ZnMnSe for electron spin alignment near-perfect spin state preparation in semiconductor quantum dots has been demonstrated. We show that the electron spin polarization depends strongly on the electron concentration in ZnMnSe:Cl. Using a model which...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics