TITLE

Hole trapping in ultrathin Al[sub 2]O[sub 3] and ZrO[sub 2] insulators on silicon

AUTHOR(S)
Afanas’ev, V. V.; Stesmans, A.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1261
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Optical injection of electron-hole pairs in 3--5 nm thick layers of SiO[SUB 2], Al[SUB 2]O[SUB 3], ZrO[SUB 2] and their stacks on (l00)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides (Al[SUB 2]O[SUB 3], ZrO[SUB 2]), the positive charge exhibits a remarkable stability to neutralization by electrons which is neither observed in thicker layers of the same oxides nor in thermal SiO[SUB 2]. Most of the positive charge is associated with diamagnetic centers (possibly, protons).
ACCESSION #
6112347

 

Related Articles

  • A new method for extracting the trap energy in insulators. Fleischer, S.; Lai, P. T.; Cheng, Y. C. // Journal of Applied Physics;4/1/1993, Vol. 73 Issue 7, p3348 

    Proposes a simple method for determining the energy level and spatial density of traps in insulators. Analysis of metal-oxide-semiconductor capacitors and transistors; Significance of nitridation techniques for ultrathin dielectrics; Conditions required for applying nitridation using a...

  • Divacancies and the hydrogenation of Mg-Ti films with short range chemical order. Leegwater, H.; Schut, H.; Egger, W.; Baldi, A.; Dam, B.; Eijt, S. W. H. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p121902 

    We obtained evidence for the partial chemical segregation of as-deposited and hydrogenated Mg1-yTiy films (0≤y≤0.30) into nanoscale Ti and Mg domains using positron Doppler-broadening. We exclusively monitor the hydrogenation of Mg domains, owing to the large difference in positron...

  • Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots. Pokutnyi, S.; Kulchin, Yu.; Dzyuba, V. // Semiconductors;Oct2015, Vol. 49 Issue 10, p1311 

    It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)-(insulating matrix) interface) in a nanosystem...

  • Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures. Goldman, E. I.; Zhdan, A. G.; Kukharskaya, N. F. // Semiconductors;Mar1999, Vol. 33 Issue 3, p308 

    Numerical simulation is used to analyze the contributions of ion traps, ion neutralization effects, and minority charge carrier generation near the insulator-semiconductor interface to the temperature dependences of the current J(T) and high-frequency capacitance C[sub s](T) during thermally...

  • Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors. Chen, M. C.; Ku, S. H.; Chan, C. T.; Tahui Wang // Journal of Applied Physics;9/15/2004, Vol. 96 Issue 6, p3473 

    Enhanced oxide breakdown progression in ultra-thin oxide silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors is observed, as compared to bulk devices. The enhanced progression is attributed to the increase of hole stress current resulting from breakdown induced channel...

  • A knock-on model to explain enhanced perimeter leakage in ion-implanted metal-oxide-semiconductor structures. Stinson, M. G.; Osburn, C. M. // Journal of Applied Physics;5/1/1990, Vol. 67 Issue 9, p4190 

    Presents a study that examined an enhanced leakage current through thin silicon dioxide gate insulators of ion-implanted metal-oxide-semiconductors. Influence of gate charging on current leakage; Analysis of the ion mixing and knock-on recoils in the metal-oxide-semiconductors; Effect of the...

  • Evidence for an alternative, hole-trapping related random telegraph signal mechanism in.... Simoen, E.; Claeys, C. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p876 

    Provides evidence for an alternative random telegraph signal (RTS) mechanism in n-channel silicon-on-insulator metal-oxide-semiconductor transistor. Observation of anomalous RTS behavior; Occurrence of majority carrier trapping by a defect in the silicon film; Relation of the drain current...

  • Relationship between hole trapping and interface state generation in metal-oxide-silicon structures. Wang, S. J.; Sung, J. M.; Lyon, S. A. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1431 

    We have discovered a general relationship between the location of trapped holes and the subsequent generation of interface states. Experimentally, we find that a hole can become an interface state, but it must first be trapped between 20 and 70 Ã… from the Si/SiO2 interface (near-interfacial...

  • Characterization Techniques for Evaluating Strained Si CMOS Materials. Qianghua Xie; Ran Liu, Sharon; Xiang-Dong Wang; Canonico, Michael; Duda, Erika; Shifeng Lu; Candi Cook, Erika; Volinsky, Alex A.; Zollner, Stefan; Thomas, Shawn G.; White, Ted; Barr, Alex; Sadaka, Mariam; Bich-Yen Nguyen // AIP Conference Proceedings;2003, Vol. 683 Issue 1, p223 

    The electron and hole mobility of Si complementary metal on oxide field effect transistors (CMOS) can be enhanced by introducing a biaxial tensile stress in the Si channel. This paper outlines several key analytical techniques needed to investigate such layers. Raman scattering is used to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics