Hole trapping in ultrathin Al[sub 2]O[sub 3] and ZrO[sub 2] insulators on silicon

Afanas’ev, V. V.; Stesmans, A.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1261
Academic Journal
Optical injection of electron-hole pairs in 3--5 nm thick layers of SiO[SUB 2], Al[SUB 2]O[SUB 3], ZrO[SUB 2] and their stacks on (l00)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides (Al[SUB 2]O[SUB 3], ZrO[SUB 2]), the positive charge exhibits a remarkable stability to neutralization by electrons which is neither observed in thicker layers of the same oxides nor in thermal SiO[SUB 2]. Most of the positive charge is associated with diamagnetic centers (possibly, protons).


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