TITLE

Spring constant and damping constant tuning of nanomechanical resonators using a single-electron transistor

AUTHOR(S)
Schwab, K.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1276
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By fabricating a single-electron transistor onto a mechanical system in a high magnetic field, it is shown that one can manipulate both the mechanical spring constant and damping constant by adjusting a potential of a nearby gate electrode. The spring constant effect is shown to be usable to control the resonant frequency of silicon-based nanomechanical resonators, while an additional damping constant effect is relevant for the resonators built upon carbon nanotube or similar molecular-sized materials. This could prove to be a very convenient scheme to actively control the response of nanomechanical systems for a variety of applications including radio-frequency signal processing, ultrasensitive force detection, and fundamental physics explorations.
ACCESSION #
6112342

 

Related Articles

  • Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined.... Knap, W.; Contreras, S. // Applied Physics Letters;4/21/1997, Vol. 70 Issue 16, p2123 

    Reports high magnetic fields cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors. Presentation of a precise modelling of the cyclotron absorption in the heterojunctions; Establishments of two-dimensional electrons; Determination of the...

  • Coherent transport through a double donor system in silicon. Verduijn, J.; Tettamanzi, G. C.; Lansbergen, G. P.; Collaert, N.; Biesemans, S.; Rogge, S. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p072110 

    In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two...

  • Anomalous electrical properties of Si/Si1 - x Ge x heterostructures with an electron transport channel in Si layers. Orlov, L. K.; Horvath, Z. J.; Orlov, M. L.; Lonchakov, A. T.; Ivina, N. L.; Dobos, L. // Physics of the Solid State;Feb2008, Vol. 50 Issue 2, p330 

    The electrical properties of elastically stressed FET-like Si/Si1 - x Ge x layered heterostructures ( x < 0.2) with a modulated dopant concentration are studied. It is presumed that the amplitude of a narrow (~6-nm-thick) potential well in the Si layer corresponds to the amplitude of a...

  • Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. van Beveren, L. H. Willems; Huebl, H.; McCamey, D. R.; Duty, T.; Ferguson, A. J.; Clark, R. G.; Brandt, M. S. // Applied Physics Letters;8/18/2008, Vol. 93 Issue 7, p072102 

    We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At millikelvin temperatures, continuous wave spectra were obtained up to 40...

  • Terahertz radiation detection by field effect transistor in magnetic field. Boubanga-Tombet, S.; Sakowicz, M.; Coquillat, D.; Teppe, F.; Knap, W.; Dyakonov, M. I.; Karpierz, K.; Łusakowski, J.; Grynberg, M. // Applied Physics Letters;8/17/2009, Vol. 95 Issue 7, p072106 

    We report on terahertz radiation detection with InGaAs/InAlAs field effect transistors in quantizing magnetic field. The photovoltaic detection signal was investigated as a function of the gate voltage and magnetic field. Oscillations analogous to Shubnikov–de Haas oscillations as well as...

  • Terahertz sensing with a carbon nanotube/two-dimensional electron gas hybrid transistor. Kawano, Yukio; Uchida, Takao; Ishibashi, Koji // Applied Physics Letters;8/24/2009, Vol. 95 Issue 8, p083123 

    We report on a highly sensitive terahertz (THz) detector based on a carbon nanotube (CNT) transistor, which is integrated with a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. The operation principle of this device is that the CNT transistor senses electrical polarization...

  • Tunable Resonant Detection of sub-THz Radiation with GaAs/AlGaAs High Electron Mobility Transistors at Magnetic Fields. Białek, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Wróbel, J.; Czapkiewicz, M.; Fronc, K.; Umansky, V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p927 

    We report on investigation of oscillations periodic in the magnetic field observed in magnetoresistence, photocur-rent and photovoltage measurements in GaAs/AlGaAs high electron mobility field-effect transistor subjected to sub-terahertz radiation. The spectra show edge magnetoplasmons and...

  • Electrically detected magnetic resonance in a W-band microwave cavity. Lang, V.; Lo, C. C.; George, R. E.; Lyon, S. A.; Bokor, J.; Schenkel, T.; Ardavan, A.; Morton, J. J. L. // Review of Scientific Instruments;Mar2011, Vol. 82 Issue 3, p034704 

    We describe a low-temperature sample probe for the electrical detection of magnetic resonance in a resonant W-band (94 GHz) microwave cavity. The advantages of this approach are demonstrated by experiments on silicon field-effect transistors. A comparison with conventional low-frequency...

  • Calculations of giant magnetoimpedance and of ferromagnetic resonance response are rigorously equivalent. Yelon, A.; Me´nard, D.; Britel, M.; Ciureanu, P. // Applied Physics Letters;11/11/1996, Vol. 69 Issue 20, p3084 

    It is simply demonstrated that the giant magnetoimpedance (GMI) response of a plate or ribbon is rigorously equivalent to the response of the same sample in ferromagnetic resonance (FMR) experiment. Thus, all of the solutions for FMR response behavior of metals may be applied to the description...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics