Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

Suehle, John S.; Vogel, Eric M.; Roitman, Peter; Conley, John F.; Johnston, Allan H.; Wang, Bin; Bernstein, Joseph B.; Weintraub, C. E.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1282
Academic Journal
Constant voltage time-dependent-dielectric-breakdown distributions were obtained for both unirradiated and irradiated 3.0 and 3.2 nm thick SiO[SUB 2] films subjected to [SUP 60]Co gamma irradiation and heavy ions of 823 MeV [SUP 129]Xe (linear energy transfer=59 MeV-cm[SUP 2]/mg). The gamma irradiation had no effect on oxide lifetime. The heavy ion irradiation substantially reduced oxide life even though the devices were biased at 0.0 V during irradiation. The reduction of oxide lifetime under constant-voltage stress conditions was a strong function of the heavy ion fluence. ..~AU.-John S., Suehle


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