Excimer-laser-irradiation-induced effects in C[sub 60] films for photovoltaic applications

Narayanan, K. L.; Yamaguchi, M.; Azuma, H.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1285
Academic Journal
Thin films of fullerene C[SUB 60] deposited by the molecular-beam epitaxy method have been subjected to a 248 nm excimer laser for various timings. Reduction in the electrical resistance of the films and the spectral evolution of the D and G bands in the Raman spectra, due to the sharp tendency towards graphitization accompanied by an increasing level of structural disorder, are observed during laser irradiation. Based on the above results, an attempt has been carried out on these irradiated C[SUB 60] films to make a device sandwiched with n-type Si, and the photovoltaic parameters are reported as a function of the laser exposure times.


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