Growth dynamics of GeSi single crystals obtained by directional constitutional supercooling of the melt

Azhdarov, G.; Zeynalov, Z.; Agamaliyev, Z.; Mamedova, S.
May 2011
Crystallography Reports;May2011, Vol. 56 Issue 3, p531
Academic Journal
The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of GeSi crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the GeSi crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing GeSi single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.


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