TITLE

Growth dynamics of GeSi single crystals obtained by directional constitutional supercooling of the melt

AUTHOR(S)
Azhdarov, G.; Zeynalov, Z.; Agamaliyev, Z.; Mamedova, S.
PUB. DATE
May 2011
SOURCE
Crystallography Reports;May2011, Vol. 56 Issue 3, p531
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The problem of growth dynamics for crystals of binary solid solutions, obtained by the constitutional supercooling of the melt with a silicon feeding rod, has been solved within the Pfann approximation. The dependences of the change in the axial growth rate of GeSi crystals (0 ≤ x ≤ 0.3) are calculated. It is shown that the GeSi crystallization rate significantly changes during growth. The results make it possible to determine the optimal conditions and technological parameters for growing GeSi single crystals (0 ≤ x ≤ 0.3) with a specified concentration gradient along the crystallization axis.
ACCESSION #
60822361

 

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