Unsolved problems on 1/f noise in MOSFETs and possible solutions

Vandamme, E. P.; Vandamme, L. K. J.
March 2000
AIP Conference Proceedings;2000, Vol. 511 Issue 1, p395
Academic Journal
A long-standing controversy exists between the Δμ-model on the one hand and the ΔN-model on the other, to describe the 1/f noise in MOSFETs. Although very successful in modelling the 1/f noise in homogeneous semiconductors, the Δμ-model does not always predict the correct bias dependence of the 1/f noise in MOS transistors. The two most important limitations are: i) a gate-bias independent α-parameter for nMOSFETs and ii) a steep increase of the normalized current noise in weak inversion. The unified ΔN-Δμ noise models do not show these limitations. Besides, the unified models also claim to model the 1/f noise in pMOSFETs, which was always better described by the Δμ-model. However, if Coulomb scattering is taken into account correctly, the unified models cannot predict the 1/f noise in pMOSFETs. Thus the unifying approach becomes merely a fitting model and the long-existing controversy remains that ΔN is better suited to describe the 1/f noise in nMOSFETs and Δμ in pMOSFETs. In weak inversion, both RTS and 1/f noise tend to level-off. Although both noise sources exhibit different noise spectra and RTS is ΔN, while 1/f noise in pMOSFETs is typically Δμ, the plateau values of ΔI[sub d]/I[sub d] and fS[sub I[sub d]]/I[sub d][sup 2] depend on the same critical number of free carriers N[sub 0]. An empirical relation will be presented for ΔI[sub d]/I[sub d] and fS[sub I[sub d]]/I[sub d][sup 2] in weak inversion. © 2000 American Institute of Physics.


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