TITLE

In situ x-ray surface diffraction chamber for pulsed laser ablation film growth studies

AUTHOR(S)
Tischler, J. Z.; Eres, G.; Lowndes, D. H.; Larson, B. C.; Yoon, M.; Chiang, T.-C.; Zschack, Paul
PUB. DATE
June 2000
SOURCE
AIP Conference Proceedings;2000, Vol. 521 Issue 1, p151
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ∼1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiO[sub 3] are presented. © 2000 American Institute of Physics.
ACCESSION #
6029396

 

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