Investigation of Na impurities on Si wafer surfaces using TXRF

Baur, K.; Singh, A.; Wang, J.; Kerner, J.; Pianetta, P.
June 2000
AIP Conference Proceedings;2000, Vol. 521 Issue 1, p161
Academic Journal
Synchrotron Radiation from the Stanford Synchrotron Radiation Laboratory (SSRL) has been used as an excitation source for Total Reflection X-ray Fluorescence Analysis (TXRF) of Na impurities on Si wafer surfaces. A wafer intentionally contaminated by a droplet containing 1.4×10[sup 14] atoms/cm[sup 2] of sodium and a wafer uniformly contaminated with 4.4×10[sup 12] atoms/cm[sup 2] of Na were investigated. The minimum detection limit for this element has been found to be 1.1×10[sup 11] atoms/cm[sup 2] for the blanket sample and 3×10[sup 11] atoms/cm[sup 2] for the droplet sample. Theoretical considerations show that the detection limit for Na can be further improved by at least a factor of 2 by exploiting the tunability of synchrotron radiation to even lower excitation energies. © 2000 American Institute of Physics.


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