A new beamline for EUV lithography research

Solak, H. H.; Li, W.; He, D.; Wallace, J.; Cerrina, F.
June 2000
AIP Conference Proceedings;2000, Vol. 521 Issue 1, p99
Academic Journal
We have recently completed construction of a new branch-line and exposure station for EUV lithography research at the Synchrotron Radiation Center. We use uniform area and interferometrically patterned exposures for the investigation of technologically relevant material properties under EUV exposure. Two multilayer mirrors are installed into an existing undulator beamline to extract the beam both before and after a spherical grating monochromator. Both beams are directed into a single experimental chamber by means of additional multilayer mirrors. In this way both the high flux raw undulator beam and the monochromatic beam are available for experiments. © 2000 American Institute of Physics.


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