Dynamical scattering of X-rays by real binary crystals and problem of point defects

Datsenko, L. I.; Klad’ko, V. P.; Machulin, V. F.; Manninen, S.; Prokopenko, I. V.
May 2000
AIP Conference Proceedings;2000, Vol. 514 Issue 1, p153
Academic Journal
One of the important subjects in the material science of semiconductor compounds is a problem of stoichiometry. The methods based on the measurement of kinematical integral reflectivity (IR), R[sub i][sup K], for the quasi-forbidden reflection (QFR) of X-rays were formerly used for investigation of the GaAs composition. To determine the value of deviation from stoichiometry, Δ=c[sub A]-c[sub B] where c[sub i] is a concentration of the component A or B, one should make some corrections for extinction phenomena which is difficult to take into account for a real (with defects) crystal. The reflectivity of a real crystal for a QFR, R[sub i][sup D], may be also described within the dynamical theory taking into account the Debye-Waller static factor, L[sub H], the extinction coefficient μ[sub ds], and parameter Δ. To determine these characteristics the experimental thickness pendulum oscillation of R[sub i][sup D](t) (200 reflection, λ=0.1198 nm) was measured and analyzed for the first time. By this the Ho¨nl corrections of atomic formfactors for anomalous dispersion were made. Another independent approach consisted in analysis of the experimental energetic dependence of the R[sub i](λ) for the wavelengths situated between the two absorption K-edges was used too. Relatively close values of the L[sub H] and μ[sub ds] for GaAs crystals with dislocations as well as parameter Δ were obtained by fitting of the R[sub i][sup D](t) and R[sub i][sup D](λ) nonlinear functions, calculated by the theory, to the experimental data. © 2000 American Institute of Physics.


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