TITLE

NDT profiling of dopants and photoconductivity in Si with high spatial resolution using evanescent microwave probes

AUTHOR(S)
Tabib-Azar, M.; Ciocan, R.
PUB. DATE
May 2000
SOURCE
AIP Conference Proceedings;2000, Vol. 509 Issue 1, p571
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nondestructive and non-intrusive profiling of doping concentration in semi conductors has attained a renewed importance in the ever important field of Ultra-Large-Scale integrated circuits (ULSI). In ULSI, the drain and source doping concentration is very high (>10 ∧19 1/cc) and their depth is very shallow (<500 Angstrom). These so-called “Shallow Junctions” are very difficult to non-destructively characterize. Here we present some preliminary results regarding doping profiling in silicon using a novel technique that uses an evanescent microwave probe (EMP) to detect and monitor the field-effect conductivity modulation of semiconductor surfaces. EMP is a local probe with very high spatial resolution of better than 0.4 micrometer at 1 GHz and it can be used to image the microwave properties of a variety of materials including metals, semiconductors, insulators, composites, and biological and botanical samples. The operation principles of the EMP and its applications in semiconductors will be presented. Moreover, its profiling capability and accuracy will be compared to other main-stream techniques such as capacitance versus voltage (C-V) technique. © 2000 American Institute of Physics.
ACCESSION #
6029080

 

Related Articles

  • Investigation of the influence of fraction of SiC particles on the elastic moduli of SiC[sub p]/aluminum. He, J.; Zhang, X. R.; Zhang, F.; Zhang, G. D. // AIP Conference Proceedings;2002, Vol. 615 Issue 1, p1126 

    We investigate the influence of the volume fraction of silicon carbide particles (SiC[sub p]) in an A1 matrix composite on the elastic moduli of composites by using laser ultrasonic method. A series of SiC[sub p]/A1 composites with six volume fractions of reinforcement SiC[sub p] are used as...

  • Study on the influence of fraction of SiC particles on the thermal diffusivity of composite. Zhang, X. R.; Lin, S.; He, J.; Zhang, F.; Zhang, G. D. // AIP Conference Proceedings;2002, Vol. 615 Issue 1, p1141 

    We investigate the influence of the volume fraction of silicon carbide particles (SiC[sub p]) on the thermal diffusivity of A1 matrix reinforced by SiC[sub p] composite by using mirage effect. A series of silicon carbide particles reinforced LY12 aluminum alloy (SiC[sub p]/LY12-A1) composites...

  • Simple, nondestructive silicon membrane thickness measurement using a scanning electron microscope. Raley, Norman F.; Van Duzer, Theodore // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p280 

    Presents a study that proposed a nondestructive method using an electron beam for measuring the thickness of a silicon membrane supported by adjacent silicon bulk material. Applications of crystalline silicon membranes; Explanation of the characteristics of the visual null method; Use of the...

  • Study on the photoconductivity characteristics of porous Si. Yeh, C.C.; Hsu, Klaus Y.J.; Samanta, L.K.; Chen, P.C.; Hwang, H.L. // Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1617 

    Examines the photoconductivity characteristics of porous silicon. Utilization of conventional planar fabrication technique and electrochemical etching method; Fabrication of junctions by low energy ion implantation; Formation of porous silicon.

  • Influence of a-Si:H Band Tails on the Occupation of Dangling-Bond States and on Photoconductivity. Kuznetsov, S. V.; Terukov, E. I. // Semiconductors;Jun2001, Vol. 35 Issue 6, p656 

    The results of numerical calculation are presented for the temperature dependence of photoconductivity and occupation of dangling-bond states of a-Si:H with various doping levels. The calculations show that the energy position of traps influences substantially the temperature dependences of...

  • Submicron-gap high-mobility silicon picosecond photodetectors. Shahidi, Ghavam G.; Ippen, E. P.; Melngailis, J. // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p719 

    High-speed photoconductive switching in silicon is achieved, without a reduction in mobility or lifetime, by carrier sweep-out. Using photoconductive gaps ranging in width from 14 to 0.22 μm, we have studied the variation of switching speed with gap dimension and applied voltage. With...

  • Numerical modeling of the dependence of the steady-state photoconductivity in hydrogenated amorphous silicon on the rate of carrier generation. Shen, D. S.; Wagner, S. // Journal of Applied Physics;7/1/1995, Vol. 78 Issue 1, p278 

    Discusses a study that detailed the numerical modeling of the dependence of the steady-state photoconductivity in hydrogenated amorphous silicon on the rate of carrier generation. Description of the analytical model and limitation of its closed-form solution; Importance of photoconductivity;...

  • Photoconductivity of sulfur-doped silicon near 10.6 μm. Siyabekov, Kh. B.; Tulanov, V. T. // Semiconductors;Dec97, Vol. 31 Issue 12, p1231 

    The extrinsic photoconductivity of Si〈S〉 under short-wavelength (10.6 µm) illumination was investigated in the pulsed regime. It was found that sensitivity can be increased by 2-3 orders of magnitude by short-wavelength illumination. It was established that increasing the degree...

  • Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon. Bube, Richard H.; Redfield, David // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3074 

    Presents a study which examined the variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon (a-Si:H). Dependence of photoconductivity on the defect structure in a-Si:H; Phenomenon that can be used as a diagnostic tool in evaluating changes in the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics