Langevin approach to noise modelling of bipolar microwave transistors

Patti, F.; Miceli, V.; Spagnolo, B.
April 2000
AIP Conference Proceedings;2000, Vol. 513 Issue 1, p198
Academic Journal
We present a new approach to study the complete stochastic properties of fluctuations of the output current of microwave transistors. We obtain the π-hybrid model of bipolar microwave transistors with the noise internal sources starting from experimental on-wafer measurements of the scattering and noise parameters. We derive the stochastic differential equations of the Giacoletto model for different loads and source admittances. We give the analytical temporal behavior of the second moment of the output current, assuming particular given correlation functions between the internal noise sources. © 2000 American Institute of Physics.


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