Correlation of structural and electrical transport properties in hydrogenated silicon films

Barreca, F.; Fazio, E.; Neri, F.; Trusso, S.; Vasi, C.
April 2000
AIP Conference Proceedings;2000, Vol. 513 Issue 1, p23
Academic Journal
In this work we report on the correlation between the structural properties, i.e., crystalline/amorphous phase ratio and grain size, and the electrical transport properties of hydrogenated silicon thin films. The samples were deposited by means of pulsed laser ablation of a high purity silicon target in presence of hydrogen gas. Infrared spectroscopy measurements showed a monohydride preferential incorporation at the lower hydrogen pressures. The Raman spectroscopy studies of the TO phonon line suggest that crystallinity and hydrogenation of the films, deposited at room temperature, can be properly adjusted as a function of the deposition parameters. The temperature dependence of both the dark and the photo electrical conductivity shows a thermally activated behavior, which is strictly related to the silicon microstructure and to the hydrogen content and bonding configuration. © 2000 American Institute of Physics.


Related Articles

  • Bonding configurations and optical band gap for nitrogenated amorphous silicon carbide films prepared by pulsed laser ablation. Trusso, S.; Barreca, F.; Neri, F. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2485 

    SiC[sub χ]N[sub y] thin films have been deposited by ablating a sintered silicon carbide target in a controlled nitrogen atmosphere. The structural and the optical properties of the films were investigated by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. The nitrogen...

  • Surface Plasmon Resonance-Coupled Photoluminescence and Resistive Switching Behavior of Pulsed Laser-Deposited Ag:SiC Nanocermet Thin Films. Kamakshi, Koppole; Sekhar, K.; Almeida, A.; Moreira, J.; Gomes, M. // Plasmonics;Oct2015, Vol. 10 Issue 5, p1211 

    In this study, Ag:SiC nanocermets were prepared via rapid thermal annealing (RTA) of pulsed laser-deposited SiC/Ag/SiC trilayers grown on Si substrate. Atomic force microscope images show that silver nanoparticles (Ag NPs) are formed after RTA, and the size of NPs increases with increasing Ag...

  • Crystalline 3C-SiC Deposited by PLD Using Different Manufactured Targets. Monaco, G.; Garoli, D.; Natali, M.; Pelizzo, M. G.; Nicolosi, P. // AIP Conference Proceedings;11/1/2010, Vol. 1292 Issue 1, p35 

    Nowadays crystalline Silicon Carbide (SiC) thin films are promising coatings for high-temperature, high-power and high-frequency electronic devices as well as for optical (for Infrared and Extreme Ultraviolet, EUV) and optoelectronic applications because of its physical and electrical...

  • Raman and infrared spectroscopy of ferroelectric Pb(Ti0.48Zr0.52)O3 films deposited by pulsed laser ablation. Yakovlev, V. A.; Mattei, G.; Iembo, A.; Fuso, F.; Arimondo, E.; Allegrini, M.; Leccabue, F.; Watts, B. E. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6321 

    Presents information on a study which examined the Pb(Ti[sub0.48]Zr[sub0.52])O[sub3] films produced by pulsed laser ablation deposition (PLAD) for their homogeneity and thickness through a comparative use of Raman and infrared spectroscopy. Features of PLAD; Micro-Raman spectra of several...

  • Morphological and structural modifications induced in a-SiC:H films by excimer laser annealing. Coscia, U.; Ambrosone, G.; Basa, D. K.; Tresso, E.; Chiodoni, A.; Pinto, N.; Murri, R. // Applied Physics A: Materials Science & Processing;Sep2010, Vol. 100 Issue 4, p1163 

    Hydrogenated amorphous silicon carbon films of different carbon content deposited by plasma enhanced chemical vapour deposition on Corning glass and crystalline silicon substrates have been irradiated by an excimer (KrF) laser. The properties of these samples were investigated by X-ray...

  • Structural analysis of silicon carbon nitride films prepared by vapor transport-chemical vapor deposition. Awad, Y.; El Khakani, M. A.; Scarlete, M.; Aktik, C.; Smirani, R.; Camiré, N.; Lessard, M.; Mouine, J. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p033517 

    Amorphous silicon carbon nitride (a-SiCN:H) films were synthesized using vapor transport-chemical vapor deposition technique. Poly(dimethylsilane) was used as a single source for both Si and C. NH3 gas diluted in Ar is used as a source for nitrogen. The composition and bonding states are...

  • Development of a short pulsed corona discharge ionization source for ion mobility spectrometry. Yuan An; Aliaga-Rossel, R.; Choi, Peter; Gilles, Jean-Paul // Review of Scientific Instruments;Aug2005, Vol. 76 Issue 8, p085105 

    The development of a pulsed corona discharge ionization source and its use in ion mobility spectrometry (IMS) is presented. In a point-plane electrode geometry, an electrical pulse up to 12 kV, 150 ns rise time and 500 ns pulse width was used to generate a corona discharge in air. A single...

  • Infrared matrix-isolation spectroscopy using pulsed deposition of p-H[sub 2]. Yu-Jong Wu, Mauro; Xueming Yang; Yuan-Pern Lee // Journal of Chemical Physics;1/15/2004, Vol. 120 Issue 3, p1168 

    We employed pulsed deposition of p-H[sub 2] onto a cold target to form a matrix sample suitable for measurements of infrared absorption. Unlike the method of rapid vapor deposition at ∼2.5 K, developed by Fajardo et al., this method can be performed at a temperature as high as 5.5 K,...

  • Buffer layer ZnO-assistant fabrication of c-axis GaN films by using pulsed laser deposition on Si(111) substrate: annealing effects in ammonia ambience. Man, B. Y.; Wei, J.; Yang, C.; Chen, C. S.; Liu, M. // Applied Physics A: Materials Science & Processing;Sep2009, Vol. 96 Issue 4, p827 

    ZnO buffer layers have been used to fabricate GaN thin films by using pulsed laser deposition on Si (111) substrates. c-axis GaN thin films were obtained by annealing in NH3 atmosphere at 950°C for 15 min. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and atomic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics