Contributions to the photoluminescence activity in the UV range in amorphous-SiO[sub 2]

Cannas, M.; Agnello, S.; Boscaino, R.; Gelardi, F. M.; Leone, M.
April 2000
AIP Conference Proceedings;2000, Vol. 513 Issue 1, p63
Academic Journal
We report a detailed experimental study on the photoluminescence activity in the UV range (4.0–4.5 eV) performed in natural and synthetic silica types both as grown and after γ exposure. Our results allow us to add new insight on the well-known emissions at 4.2 and 4.4 eV as regard their vacuum-UV excitation spectra and their kinetics behaviors. Moreover, a new contribution to the photoluminescence at 4.4 eV, excited within the absorption E band at 7.6 eV and exhibiting a strong temperature dependence, is identified and discussed in the light of the structural models reported in literature. © 2000 American Institute of Physics.


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