TITLE

Self-eliminating instrumental frequency response from free carrier absorption signals for silicon wafer characterization

AUTHOR(S)
Huang, Qiuping; Li, Bincheng
PUB. DATE
April 2011
SOURCE
Review of Scientific Instruments;Apr2011, Vol. 82 Issue 4, p043104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Accurate determination of electronic transport properties of semiconductor wafers with modulated free carrier absorption (MFCA) and multiparameter fitting requires the total elimination of instrumental response from the MFCA signals. In this paper, an approach to eliminate the effect of instrumental response on the frequency dependence of MFCA amplitude and phase is developed both theoretically and experimentally to simultaneously determine the transport properties (minority-carrier lifetime, carrier diffusion coefficient, and front surface recombination velocity) of silicon wafers. Experimental results showed that with the proposed method the instrumental frequency response was fully eliminated from the experimental MFCA data and had no impact on the multiparameter fitting, while with conventional methods the accuracy of the fitted transport parameters was influenced detrimentally by the errors of the measured instrumental frequency responses, in particular for the minority-carrier lifetime and the front surface recombination velocity.
ACCESSION #
60283535

 

Related Articles

  • Measurement of silicon interstitial diffusivity. Griffin, P. B.; Fahey, P. M.; Plummer, J. D.; Dutton, R. W. // Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p319 

    A conceptually simple experiment to measure silicon interstitial diffusivity is described. The structure uses a silicon wafer with buried layers deep in the bulk. Oxidation of the wafer surface generates interstitials that diffuse into the wafer and enhance the buried layer diffusion. The...

  • Determination of minority-carrier diffusion length in a p-silicon wafer by photocurrent generation method. Sharma, S. K.; Singh, S. N.; Chakravarty, B. C.; Das, B. K. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3550 

    Presents a study that outlined a nondestructive method to determine the diffusion length of minority carriers in a p-silicon wafer. Basis of the method; Structure of the wafer; Diffusion length.

  • Second derivative internal photoemission spectroscopy for the study of interdiffusion and compound formation phenomena. Krawczyk, S. K.; Mrabeut, T. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p837 

    In this letter a simple spectroscopic method for the study of interdiffusion and compound formation phenomena occurring between two metal layers deposited on the top of oxidized silicon wafer is developed. Using this method, the simultaneous presence of different metallic compounds at the...

  • Titanium diffusion in silicon. Hocine, S.; Mathiot, D. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1269 

    Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range...

  • Phosphorus diffusion effect on defect structure of silicon with oxygen precipitates revealed by.... Yakimov, E.; Perichaud, I. // Applied Physics Letters;10/2/1995, Vol. 67 Issue 14, p2054 

    Investigates the influence of phosphorus diffusion on the defect structure of two step annealed Czochralski silicon wafers. Use of gold diffusion analysis in determining the distribution of intrinsic point defects; Dependence of gold concentration with the oxygen precipitation; Impact of...

  • Aspects of Iron Contamination Studies in Silicon by Photoluminescence Correlation to Other Techniques. Rapoport, I.; Taylor, P.; Orschel, B.; Kearns, J.; Kirscht, F.; Buczkowski, A.; Hummel, S. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p103 

    Photoluminescence (PL) studies were applied to intentionally iron contaminated silicon wafers to validate the PL technique for the quantitative evaluation of bulk iron in silicon. Iron contamination ranged from 109 cm-3 to 1012 cm-3. For lightly doped p-type and n-type silicon a good correlation...

  • Photon Influence on P and B Diffusion. Aderhold, W.; Hunter, A.; Felch, S. B.; Ranish, J. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p95 

    We investigate photon effects for two thermal processes: implanted dopant activation and diffusion; and silicon oxidation. Because the Applied Materials Radiance Plus RTP system heats only one side of the wafer with lamps, the thermal and photon effects are separable by changing the side of the...

  • Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence. Giesecke, J. A.; Schubert, M. C.; Walter, D.; Warta, W. // Applied Physics Letters;8/30/2010, Vol. 97 Issue 9, p092109 

    Based on quasi-steady-state photoluminescence, we present an approach to extract minority carrier lifetime from silicon wafers without a priori information about any material parameter (e.g., dopant concentration or mobility). A sinusoidal oscillation of irradiation of a silicon sample in time...

  • Resonant pattern formation in a chemical system. Petrov, Valery; Ouyang, Qi // Nature;8/14/1997, Vol. 388 Issue 6643, p655 

    Reports research which asserts that reaction-diffusion processes can exhibit frequency-locking phenomena. Nature of frequency-locking; Recent theoretical analysis; Role of reaction-diffusion processes in chemical and biological systems; Examples of frequency-locking; Results.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics