TITLE

Note: Design and characterization of an optical light source based on mixture of white and near-ultraviolet light emitting diode spectra

AUTHOR(S)
Sametoglu, Ferhat; Celikel, Oguz
PUB. DATE
April 2011
SOURCE
Review of Scientific Instruments;Apr2011, Vol. 82 Issue 4, p046111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An optical light source based on a solid-state lighting technology is designed. Main components of the light source are a phosphor-converted white and a near-ultraviolet (near-UV) light emitting diodes (LEDs), the spectral power distributions (SPDs) of which are mixed using a fiber optic combiner. The near-UV LED is used for improving insufficient SPDs of the white LED at shorter wavelengths of the visible radiation. Stable direct current power supplies are also designed and used to operate each of the LED separately. Three steps of the driving current can be selected by means of serial resistors altered with a commutator at nominal current values of ∼40%, ∼50%, and ∼69%. The light source can be used for many characteristic measurements within the scope of photometry and colorimetry.
ACCESSION #
60283498

 

Related Articles

  • Synthesis and photoluminescence characteristics of color-tunable BaY2ZnO5:Eu3+ phosphors. Liang, Chih-Hao; Chang, Yee-Cheng; Chang, Yee-Shin // Applied Physics Letters;11/24/2008, Vol. 93 Issue 21, p211902 

    Color-tunable phosphors of BaY2-xEuxZnO5 (x=0.001–0.9) were synthesized using a vibrating milled solid state reaction. The results indicate that the emission spectra of BaY2-xEuxZnO5 samples excited at 395 nm exhibit a series of shaped peaks assigned to the 5D0→7FJ (J=0,1,2,3,4)...

  • ASK A GEEK: SCOTT FULLAM. Fullam, Scott // Popular Science;Jul2004, Vol. 265 Issue 1, p92 

    Answers a question about hacking a standard flashlight to use light-emitting diodes to enhance brightness and battery life. Number of light emitting diodes that can be added in hacking a standard flashlight; Resistors needed for each light emitting diodes; Ways to hack the standard flashlight...

  • Feasibility of Ultraviolet-Light-Emitting Diodes as an Alternative Light Source for Photocatalysis. Levine, Lanfang H.; Richards, Jeffrey T.; Coutts, Janelle L.; Soler, Robert; Maxik, Fred; Wheeler, Raymond M. // Journal of the Air & Waste Management Association (Air & Waste M;Sep2011, Vol. 61 Issue 9, p932 

    The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (γmax =365 nm) LEDs was designed to be inter-changeable...

  • Structural and interface properties of an AlN diamond ultraviolet light emitting diode. Miskys, C. R.; Garrido, J. A.; Hermann, M.; Eickhoff, M.; Nebel, C. E.; Stutzmann, M.; Vogg, G. // Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3699 

    Two practically fully relaxed AlN domains were identilied by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[1010] AlNI¦¦ (100)[011] diamond for the predominant AlN domain (type I) and (0001)[1210] AlNII (100)[011] diamond for the second...

  • Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes. Zhang, J. C.; Zhu, Y. H.; Egawa, T.; Sumiya, S.; Miyoshi, M.; Tanaka, M. // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p131117 

    The origin and suppression of the subband parasitic peak in AlGaN deep ultraviolet light-emitting diodes have been studied. The parasitic peak is clarified to come from a p-AlGaN cladding layer and to be related to Mg dopants. By using 1 nm i-AlN as an interlayer between the active region and...

  • Safety Color Appearance under White Light Emitting Diodes (LEDs). Qifei Tu; Li Zhou // Leukos (Illuminating Engineering Society of North America);Jan2007, Vol. 3 Issue 3, p189 

    With the fast development of light emitting diodes (LED) technology, they are potential light sources for automotive headlamps. This paper discussed the color differences of traffic signs under LEDs in comparison with the halogen lamp, and the importance of the detail spectral power distribution...

  • Diverse fiberoptic systems require varied sources. Hecht, Jeff // Laser Focus World;Jan2000, Vol. 36 Issue 1, p155 

    Discusses factors to be considered in choosing fiberoptic light sources. Light-emitting diode sources; Semiconductor laser sources; Edge-emitting Fabry-Perot lasers; Vertical-cavity surface-emitting lasers.

  • High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors. Nishida, Toshio; Ban, Tomoyuki; Kobayashi, Naoki // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3817 

    The high-color-rendering (HCR) potential of the light sources consisting of 350-nm ultraviolet light-emitting diodes (UV-LED) and three-basal-color phosphors was simulated and experimentally confirmed. By using an AlGaN-based UV-LED as an excitation source at the 350-nm wavelength, we measured...

  • White-light generation and energy transfer in SrZn2(PO4)2:Eu,Mn phosphor for ultraviolet light-emitting diodes. Woan-Jen Yang; Teng-Ming Chen // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p101903 

    The SrZn2(PO4)2:Eu2+,Mn2+ phosphor shows two emission bands under ultraviolet radiation; the one observed at 416 nm is attributed to Eu2+ occupying the Sr2+ sites and the other asymmetric band deconvoluted into two peaks was found to center at 538 and 613 nm, which originate from Mn2+ occupying...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics