TITLE

H[sub 2][sup +] in strong laser fields—resolution of photofragments from different vibrational levels

AUTHOR(S)
Sa¨ndig, K.; Figger, H.; Ha¨nsch, T. W.
PUB. DATE
July 2000
SOURCE
AIP Conference Proceedings;2000, Vol. 525 Issue 1, p502
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A photodissociation-experiment with H[sub 2][sup +] in strong laser fields at intensities of ≤1.5 * 10[sup 14] W/cm[sup 2] has been carried out using a molecular ion beam setup with high energy resolution of the photofragments. The effects predicted by the theory of light-induced molecular potentials, like bond-hardening, bond-softening and level-shifting of low vibrational levels have been directly observed on H[sub 2][sup +]. © 2000 American Institute of Physics.
ACCESSION #
6028334

 

Related Articles

  • Defects in a-Si:H films induced by Si ion implantation. Golikova, O. A. // Semiconductors;Apr99, Vol. 33 Issue 4, p447 

    Undoped a-Si:H films implanted with silicon ions (dose 10[sup 12]-10[sup 14]cm[sup -2], mean energy e = 60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in the...

  • An electronic pepper pot. Peters, J. // Review of Scientific Instruments;Apr94, Vol. 65 Issue 4, p1459 

    An electronic pepper pot has been developed at DESY for analyzing the H[sup -] beam. It consists of a number of slits in front of a harp with a high wire density: Multiplexing of the harp signals is done in the vacuum. The number of slits and the distance between the harp and the slits can be...

  • Deposition and hydrogen content of carbon films grown by CH+3 ion-beam bombardment. Plank, H.; Wang, W.; Eckstein, W.; Schwörer, R.; Steffen, H. J.; Roth, J. // Journal of Applied Physics;11/1/1995, Vol. 78 Issue 9, p5366 

    Presents information on a study which investigated carbon deposition and hydrogen codeposition as a function of ion energy, fluence and target temperature at normal incidence by bombardment of silicon and pyrolitic graphite substrates. Experimental details; Initial film growth; Deposition rates...

  • Hydrogen atom transfer reactions of He+ and Ne+ with H2, D2, and HD. Ervin, Kent M.; Armentrout, P. B. // Journal of Chemical Physics;6/1/1987, Vol. 86 Issue 11, p6240 

    The hydrogen atom transfer reactions of helium(1+) and neon(1+) ions with isotopic molecular hydrogen (H2, D2, and HD) are investigated using guided ion beam techniques. These reactions are exothermic, but are known to be extremely slow at thermal energies. The cross sections for formation of...

  • A novel ion beam monitor using Kapton foils Guharay, S.K.; Guharay, S. K.; Hamabe, M.; Kuroda, T. // Review of Scientific Instruments;May98, Vol. 69 Issue 5, p2182 

    Examines the use of Kapton foils as ion beam monitor. Analysis of film 'burn' pattern caused by ion beam irradiation; Determination of beam power density distribution; Relation of ion current density distribution to ion beam distribution; Use of hydrogen ion beam to study ion beam-Kapton foil...

  • A Study of Cold Cathodes for the Plasma Sources of Hydrogen Ion Beams. Veresov, L. P.; Veresov, O. L.; Dzkuya, M. I.; Zhukov, Yu. N.; Kuznetsov, G. V.; Tsekvava, I. A. // Technical Physics;Oct2001, Vol. 46 Issue 10, p1256 

    Two types of cold cathodes (the hollow and magnetron) of a duoplasmatron used for the production of proton beams are comparatively studied.

  • Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method. Hayama, Masahiro; Murai, Hiroyuki; Kobayashi, Kazuhiro // Journal of Applied Physics;2/1/1990, Vol. 67 Issue 3, p1356 

    Presents a study that examined the effect of ion bombardment on undoped hydrogenated amorphous silicon thin films. Analysis of the infrared absorption spectra of the films; Evaluation of the dependence of the substrate temperature on the direct current voltage; Assessment of the hydrogen...

  • Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment. Horn, M. W.; Heddleson, J. M.; Fonash, S. J. // Applied Physics Letters;8/17/1987, Vol. 51 Issue 7, p490 

    In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature...

  • Multipurpose Device for Nonperturbative Photoelectron Diagnostics of High-Energy H[sup —] Ion Beams. Artemov, A. S.; Antsiferov, V. V. // Technical Physics;Dec2000, Vol. 45 Issue 12, p1589 

    A method of nonperturbative photoelectron diagnostics of a high-energy negative-ion beam proposed earlier by one of the authors is briefly discussed. A multipurpose device using the proposed method of a relativistic H[sup -] ion beam in straight-line segments of the transportation channel is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics