Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition

Cheong, M. G.; Kim, K. S.; Kim, C. S.; Choi, R. J.; Yoon, H. S.; Namgung, N. W.; Suh, E.-K.; Lee, H. J.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1001
Academic Journal
P-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects show that the thermal activation energy of the acceptor (E[sub A]) is strongly dependent on the acceptor density (N[sub A]), approximated by E[sub A](0)=372-1.16×10[sup -18] N[sub A] meV at 0 K. A strong temperature dependence of E[sub A] was also obtained in this study. © 2002 American Institute of Physics.


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