Carrier-enhanced ferromagnetism in Ge[sub 1-x]Mn[sub x]Te

Fukuma, Y.; Asada, H.; Arifuku, M.; Koyanagi, T.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1013
Academic Journal
We have studied the dependence of magnetic properties on the carrier concentration of IV–VI diluted magnetic semiconductor Ge[sub 1-x]Mn[sub x]Te prepared by ionized-cluster beam technique. With increasing carrier concentration, the magnetic properties drastically change; saturation magnetization increases and coercive field decreases in hysteresis loop, and the Curie temperature increases. These results obviously show carrier-enhanced ferromagnetic order. The similar effect is also observed in magnetoresistance behavior. © 2002 American Institute of Physics.


Related Articles

  • Magnetoresistance of Ce3Cu3Sb4: Ferromagnetic semiconductor (abstract). Paulose, P.L.; Patil, Sujata // Journal of Applied Physics;4/17/1997, Vol. 81 Issue 8, p5777 

    Presents an abstract of the paper `Magnetoresistance of Ce3Cu3Sb4: Ferromagnetic Semiconductor,' presented by P.L. Paulose and Sujata Patil, at the American Institute of Physics' 1997 Conference on Magnetism and Magnetic Materials.

  • Novel Spintronic Devices Using Local Anisotropy Engineering in (Ga,Mn)As. Gould, C.; Wenisch, J.; Pappert, K.; Hümpfner, S.; Ebel, L.; Brunner, K.; Schmidt, G.; Molenkamp, L. W. // Journal of Superconductivity & Novel Magnetism;Jan2010, Vol. 23 Issue 1, p69 

    The prototypical ferromagnetic semi-conductor (Ga,MnAs) is interesting for spintronics devices, largely because of its rich magnetic and transport anisotropy. The lack of local anisotropy control has until recently limited device options to structures where all elements have the anisotropy...

  • Reduction of saturation magnetic field in superlattices by addition of subsidiary ferromagnetic layers. Takahashi, Y.; Inomata, K. // Journal of Applied Physics;2/15/1995, Vol. 77 Issue 4, p1662 

    Proposes a structure of a magnetic sandwich film, in which subsidiary soft ferromagnetic layers are epitaxially grown on both sides of a conventional magnetic sandwich film and are ferromagnetically coupled to the adjacent ferromagnetic layers. Information on giant magnetoresistance; Theory;...

  • Magnetoresistance near the ferromagnetic-paramagnetic phase transition in magnetic semiconductors. Brodowska, B.; Kuryliszyn-Kudelska, I.; Wojtowicz, T.; Arciszewska, M.; Dobrowolski, W.; Slynko, E. I.; Slynko, V. E.; Liu, X.; Furdyna, J. K. // Applied Physics Letters;7/28/2008, Vol. 93 Issue 4, p042113 

    Magnetic and transport properties of ferromagnetic semiconductors (FMSs) near the ferromagnetic-paramagnetic phase transition were studied in two classes of FMSs: in the III–V-based In1-xMnxSb and Ga1-xMnxAs epitaxial films and in IV–VI-based Sn1-xMnxTe and Sn1-x-yMnxEryTe alloys...

  • Exchange Coupling in Magnetic Semiconductor Multilayers and Superlattices. Furdyna, J. K.; Leiner, J.; Liua, X.; Dobrowolska, M.; Lee, S.; Chung, J.-H.; Kirby, B. J. // Acta Physica Polonica, A.;May/Jun2012, Vol. 121 Issue 5/6, p973 

    The study of ferromagnetic semiconductors continues to be of great interest because of their potential for spintronic devices. While there has been much progress in our understanding of ferromagnetic semiconductor materials-particularly of the canonical III-V system Ga1-xMnxAs-many issues still...

  • High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide. Peleckis, Germanas; Xiaolin Wang; Shi Xue Dou // Applied Physics Letters;7/10/2006, Vol. 89 Issue 2, p022501 

    Observation of high temperature ferromagnetism in Ni-doped In2O3 and indium-tin-oxide (ITO) samples prepared by a solid state synthesis route is reported. Both Ni-doped compounds showed a clear ferromagnetism above 300 K with the magnetic moments of 0.03–0.06μB/Ni and 0.1μB/Ni at...

  • A low field technique for measuring magnetic and magnetoresistance anisotropy coefficients applied to (Ga,Mn)As. Haigh, J. A.; Rushforth, A. W.; King, C. S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L. // Applied Physics Letters;12/7/2009, Vol. 95 Issue 23, p232102 

    We demonstrate a simple, low cost, magnetotransport method for rapidly characterizing the magnetic anisotropy and anisotropic magnetoresistance of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analog of magnetic susceptibility measurements of bulk...

  • Magnetic effects at the interface between non-magnetic oxides. Brinkman, A.; Huijben, M.; van Zalk, M.; Huijben, J.; Zeitler, U.; Maan, J. C.; van der Wiel, W. G.; Rijnders, G.; Blank, D. H. A.; Hilgenkamp, H. // Nature Materials;Jul2007, Vol. 6 Issue 7, p493 

    The electronic reconstruction at the interface between two insulating oxides can give rise to a highly conductive interface. Here we show how, in analogy to this remarkable interface-induced conductivity, magnetism can be induced at the interface between the otherwise non-magnetic insulating...

  • Large Magnetoresistance in an Inhomogeneous Magnetic Semiconductor. Solin, N. I.; Naumov, S. V. // JETP Letters;12/25/2000, Vol. 72 Issue 12, p612 

    A new way of attaining large values of magnetoresistance in a magnetic semiconductor was investigated. The mechanism of magnetoresistance is based on the formation of a space charge, a depletion layer, and a contact potential U[sub c] at the interface between two semiconductors with different...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics