Submicron YBa[sub 2]Cu[sub 3]O[sub x] ramp Josephson junctions

Komissinski, Philippe V.; Ho¨gberg, Bjo¨rn; Tzalenchuk, Alexander Ya.; Ivanov, Zdravko
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1022
Academic Journal
Submicron YBa[sub 2]Cu[sub 3]O[sub x]/PrBa[sub 2]Cu[sub 2.6]Ga[sub 0.4]O[sub x]/YBa[sub 2]Cu[sub 3]O[sub x] ramp-type Josephson junctions were fabricated and tested. The submicron bridges in the top electrode were patterned by e-beam lithography and Ar ion milling through an amorphous carbon (a-C) mask. Junctions with width ranging from 0.2 to 8 μm and oriented along different crystal directions of YBa[sub 2]Cu[sub 3]O[sub x] have been produced. Current–voltage characteristics show a behavior consistent with the resistively shunted junction model with small excess current. Junction critical current densities of about 10 kA/cm[sup 2] and characteristic voltages up to 6 mV were measured at 4.2 K for the submicron junctions. Junctions along different crystal orientations showed different characteristics suggesting an influence from the d-wave order parameter. © 2002 American Institute of Physics.


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