TITLE

Electrical properties and devices of large-diameter single-walled carbon nanotubes

AUTHOR(S)
Javey, Ali; Shim, Moonsub; Dai, Hongjie
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1064
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Individual large-diameter (∼3 to 5 nm) semiconducting single-walled carbon nanotubes (SWNTs) are found to exhibit ambipolar field-effect transistor (FET) behavior, with easily accessible n- and p-conduction channels by simple electrostatic gates. The effects of temperature and ultraviolet radiation on their electrical properties are elucidated, shedding light into the intrinsic behavior of SWNTs in this relatively large-diameter regime. The ambipolar SWNT-FETs can be readily used as building blocks for functional nanoelectronic devices such as voltage inverters that operate under ambient conditions. © 2002 American Institute of Physics.
ACCESSION #
6005454

 

Related Articles

  • High Performance Double Edge Triggered D Flip-Flop Based Shift Registers Using CNTFET. Ravi, T.; Kannan, V. // IUP Journal of Electrical & Electronics Engineering;Jan2014, Vol. 7 Issue 1, p19 

    In this paper, a high performance Double Edge Triggered D Flip Flop-based Serial in Serial Out (SISO), Serial In Parallel Out (SIPO), Parallel In Serial Out (PISO) and Parallel In Parallel Out (PIPO) shift registers are designed using Carbon NanoTube Field Effect Transistor (CNTFET). The CNTFET...

  • Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts. Yang, M. H.; Teo, K. B. K.; Milne, W. I.; Hasko, D. G. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p253116 

    We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage...

  • Modeling of kink-shaped carbon-nanotube Schottky diode with gate bias modulation. Yamada, Toshishige // Applied Physics Letters;5/27/2002, Vol. 80 Issue 21, p4027 

    A model is proposed for the recent gate voltage V[sub G] modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode [Z. Yao, H. Postma, L. Balents, and C. Dekker, Nature (London) 402, 273 (1999)]. Since larger V[sub G] increases both the forward and the reverse turn-on voltages...

  • Erratum to: A Symmetric, Multi-Threshold, High-Speed and Efficient-Energy 1-Bit Full Adder Cell Design Using CNFET Technology. Safaei Mehrabani, Yavar; Eshghi, Mohammad // Circuits, Systems & Signal Processing;Mar2015, Vol. 34 Issue 3, p761 

    An erratum to the article “A Symmetric, Multi-Threshold, High-Speed and Efficient-Energy 1-Bit Full Adder Cell Design Using CNFET Technology" that was published in the January 24, 2015 issue is presented.

  • Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer. Yu-Zhan Wang; Dong-Chen Qi; Shi Chen; Hong-Ying Mao; Wee, Andrew T. S.; Xing-Yu Gao // Journal of Applied Physics;Nov2010, Vol. 108 Issue 10, p103719 

    We demonstrate that the electron injection barrier (Δe) between Co and C60 can be tuned by inserting a thin Alq3 interlayer. Using ultraviolet photoemission spectroscopy, Δe of C60 on Alq3-predecorated Co (Δe=0.3 eV) was found to be reduced by 0.3 eV compared with that of C60...

  • Tunable ambipolar Coulomb blockade characteristics in carbon nanotubes-gated carbon nanotube field-effect transistors. Li, Hong; Zhang, Qing // Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG 

    A single-walled carbon nanotube field-effect transistor has been fabricated with two single-walled carbon nanotube bundles as its top gates and a heavily doped p-type silicon substrate as its global back gate. The channel conductance is found to oscillate significantly as a function of the top-...

  • Electrical Transport in Dy Metallofullerene Peapods. Obergfell, Dirk; Meyer, Jannik C.; Po-Wen Chiu; Shihe Yang; Shangfeng Yang; Roth, Siegmar // AIP Conference Proceedings;2004, Vol. 723 Issue 1, p556 

    If endohedral metallofullerenes are inserted into a single-walled carbon nanotube (SWNT), a linear chain of metallofullerenes will form in the interior of the tube, the resulting structure is named metallofullerene peapod. C82 molecules each containing a single Dysprosium atom have been filled...

  • Channel-length scaling for effects of single defects in carbon nanotube transistors. Wang, Neng-Ping; Xu, Xiao-Jun // Journal of Applied Physics;Aug2013, Vol. 114 Issue 7, p073701 

    We investigate channel-length scaling characteristics for effects of a single charged defect in a carbon nanotube field-effect transistor (CNFET), using the nonequilibrium Greens function method. We find that the threshold voltage shift due to a single charge in midchannel increases with the...

  • Band structure modulation by carrier doping in random-network carbon nanotube transistors. Nakamura, Shuichi; Ohishi, Megumi; Shiraishi, Masashi; Takenobu, Taishi; Iwasa, Yoshihiro; Kataura, Hiromichi // Applied Physics Letters;7/3/2006, Vol. 89 Issue 1, p013112 

    We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics