Strain distribution control on the silicon wafer scale for advanced nanostructure fabrication

Omi, H.; Bottomley, D. J.; Ogino, T.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1073
Academic Journal
Looking to the long-term future of Si semiconductor technology, we propose, fabricate, and demonstrate strain distribution control on the planar Si wafer scale for advanced nanostructure self-assembly. Oxygen ions are implanted through patterned layers on the Si wafer; the sample is then annealed at 1325 °C to produce bulk oxide inclusions which yield a strain distribution. Strained epitaxial growth of Ge on the Si(001) substrate surface at 550 °C in ultrahigh vacuum produces three-dimensional islands whose location and size distribution are well controlled. The degree of localization control is in agreement with simulations of the elastic strain distribution. © 2002 American Institute of Physics.


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