TITLE

Influence of electron injection on performance of GaN photodetectors

AUTHOR(S)
Chernyak, Leonid; Schulte, Alfons; Osinsky, Andrei; Graff, John; Schubert, E. Fred
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p926
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is demonstrated that short-time (up to 1200 s) electron injection into the p-region of GaN p–n junction, as a result of forward bias application, leads to a long-term multifold enhancement of the device peak responsivity as well as to a spectral broadening of the photoresponse. The effect is found to persist for several days and is related to an increased minority carrier diffusion length in the p region, due to an injected electron trapping on deep levels associated with Mg acceptors. © 2002 American Institute of Physics.
ACCESSION #
6005432

 

Related Articles

  • Effects of Ga addition to CuInSe[sub 2] on its electronic, structural, and defect properties. Wei, Su-Huai; Zhang, S. B.; Zunger, Alex // Applied Physics Letters;6/15/1998, Vol. 72 Issue 24 

    Using a first-principles band structure method we have theoretically studied the effects of Ga additions on the electronic and structural properties of CuInSe[sub 2]. We find that (i) with increasing x[sub Ga], the valence band maximum of CuIn[sub 1-x]Ga[sub x]Se[sub 2] (CIGS) decreases...

  • Editorial. Min, Mart // Estonian Journal of Engineering;Mar2010, Vol. 16 Issue 1, p3 

    An introduction to the journal is presented in which the editor discusses a paper on the technologies for gallium arsenide (GaAs) powder diode structures, a description of high-level decision diagrams to represent digital electronic systems and articles on biomedical physics and technology.

  • Minority-carrier lifetime study of the pressure induced Γ-X crossover in GaAs. Leroux, M.; Pelous, G.; Raymond, F.; Verie, C. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p288 

    Room-temperature continuous and time-resolved (on a nanosecond scale) photoluminescence experiments have been performed on p-type GaAs. Observation of indirect luminescence in GaAs above 4 GPa allowed a direct determination of the room-temperature pressure coefficient of the X[sup c, sub 1]...

  • Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures. Masselink, W. T.; Braslau, N.; Wang, W. I.; Wright, S. L. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1533 

    We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in dc measurements at these fields, this measurement uses 35 GHz...

  • Experimental and theoretical mobility of electrons in δ-doped GaAs. Gillman, G.; Vinter, B.; Barbier, E.; Tardella, A. // Applied Physics Letters;3/21/1988, Vol. 52 Issue 12, p972 

    We have prepared and measured the mobility of several samples of planar-doped GaAs. A maximum electron density of 2.7×1013 cm-2 has been obtained. Calculations of the mobility in a complete quasi-two-dimensional description are presented and compared with the measured results. Qualitatively,...

  • Assessment of the ionized EL2 fraction in semi-insulating GaAs. Blakemore, J. S.; Sargent, L.; Tang, R-S.; Swiggard, E. M. // Applied Physics Letters;5/22/1989, Vol. 54 Issue 21, p2106 

    Both optical and electrical methods were used to provide separate evaluations of the fraction Pi of EL2 defect donors which have lost an electron. The semi-insulating GaAs which permitted these assessments had a large enough fraction of the EL2 compensated (by CAs acceptors) to make this a...

  • Hot-electron transport in selectively doped n-type AlGaAs/GaAs heterojunctions. Hirakawa, Kazuhiko; Sakaki, Hiroyuki // Journal of Applied Physics;2/1/1988, Vol. 63 Issue 3, p803 

    Focuses on a study that investigated the high-field transport of two-dimensional electrons in selectively doped aluminum gallium arsenide/gallium arsenide heterojunctions. Electric field dependence of mobility; Velocity-field characteristics; Conclusions.

  • Rapid communication Photoemission of spinpolarized electrons from strained GaAsP. Drescher, P.; Andresen, H. G.; Aulenbacher, K.; Bermuth, J.; Dombo, T.; Fischer, H.; Euteneuer, H.; Faleev, N. N.; Galaktionov, M. S.; von Harrach, D.; Hartmann, P.; Hoffmann, J.; Jennewein, P.; Kaiser, K. H.; K�bis, S.; Kovalenkov, O. V.; Kreidel, H. J.; Langbein, J.; Mamaev, Y. A.; Nachtigall, Ch. // Applied Physics A: Materials Science & Processing;1996, Vol. 63 Issue 2, p203 

    Strained layer GaAs[sub .95]P[sub .05] photo cathodes are presented, which emit electron beams spinpolarized to a degree of P = 75% typically. Quantum yields around QE = 0.4% are observed routinely. The figure of merit P� � QE = 2.3 � 10[sup -3] is comparable to that of the best...

  • Gain analysis for surface emission by optical pumping of wurtzite GaN. Domen, K.; Kondo, K.; Kuramata, A.; Tanahashi, T. // Applied Physics Letters;7/1/1996, Vol. 69 Issue 1, p94 

    We analyzed optically pumped surface emissions by calculating the optical gain in bulk GaN. We found that GaN has a large gain of over 104 cm-1 and no gain saturation up to 25 000 cm-1 . This high optical gain is generated by the high joint-density of states due to the three valence bands close...

  • Terahertz measurements of resonant planar antennas coupled to low-temperature-grown GaAs photomixers. McIntosh, K. A.; Brown, E. R.; Nichols, K. B.; McMahon, O. B.; DiNatale, W. F.; Lyszczarz, T. M. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3632 

    Resonant slot and dipole antennas coupled to low-temperature-grown GaAs photomixers have been fabricated and tested at terahertz operating frequencies. Enhanced output power is seen from the resonant structures compared to mixers coupled to broadband self-complementary spiral antennas. Driving...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics