Control of hole carrier density of polycrystalline Cu[sub 2]O thin films by Si doping

Ishizuka, S.; Kato, S.; Okamoto, Y.; Akimoto, K.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p950
Academic Journal
The effects on the electrical properties of Si doping into Cu[sub 2]O thin films deposited by reactive sputtering were studied. The hole density increased from 1×10[sup 15] to 1×10[sup 17] cm[sup -3] with increasing Si content and the minimum resistivity obtained was 12 Ω cm. It was suggested that the electrically active acceptor with an activation energy of 0.19 eV was generated by Si doping. Infrared absorption measurements indicated the formation of silicate in Si-doped Cu[sub 2]O. The mechanism for Si acting as an acceptor in Cu[sub 2]O is discussed and modeled based on the silicate formation in Cu[sub 2]O. © 2002 American Institute of Physics.


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