Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy

Einfeldt, S.; Roskowski, A. M.; Preble, E. A.; Davis, R. F.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p953
Academic Journal
The strain in thin GaN layers grown by maskless pendeoepitaxy has been investigated using high-resolution x-ray diffraction and finite-element simulations. The crystallographic tilt of the free-hanging wings was determined to result from the strain relaxation of the seed stripes along [0001]. The impact of the dimensions of the pendeostructure and of the formation of crystal defects on the expected wing tilt is discussed. © 2002 American Institute of Physics.


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