TITLE

Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells

AUTHOR(S)
Kawaguchi, M.; Miyamoto, T.; Gouardes, E.; Kondo, T.; Koyama, F.; Iga, K.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p962
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigate the effect of the sequence of gas flows at heterointerfaces on optical quality of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition (MOCVD). We point out that the degradation mechanism of photoluminescence of GaInNAs grown by MOCVD method is categorized in two types. One is the formation of a GaNAs layer at the heterointerface which causes both increase of emission wavelength and degradation of crystal quality. The other is generation of nonradiative centers induced by incorporation of nitrogen (N). The insertion of a GaInAs layer to the GaInNAs/GaAs heterointerface is proposed to overcome these degradation mechanisms. A GaInAs intermediate layer is effective to suppress the GaNAs formation and to reduce the total GaInNAs thickness. © 2002 American Institute of Physics.
ACCESSION #
6005419

 

Related Articles

  • Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition. Su, Y. K.; Juang, F. S.; Su, C. H. // Journal of Applied Physics;2/1/1992, Vol. 71 Issue 3, p1368 

    Presents a study that investigated photoluminescence in strained gallium antimony/indium gallium antimony quantum wells by metalorganic chemical vapor deposition. Details of the experiment; Results and discussion; Conclusion.

  • High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates. Fekete, D.; Carron, R.; Gallo, P.; Dwir, B.; Rudra, A.; Kapon, E. // Applied Physics Letters;8/15/2011, Vol. 99 Issue 7, p072116 

    We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency...

  • Low-temperature photoluminescence in SiGe single quantum wells. Kalem, S.; Curtis, T.; de Boer, W.B.; Stillman, G.E. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 1, p23 

    Abstract. We have investigated the low-temperature photoluminescence properties of n-type modulation doped Si[sub 1-x]Ge[sub x] single quantum wells (x = 0.19) grown by rapid thermal chemical vapor deposition at 625 Celsius. A well-resolved strong excitonic luminescence with TO-phonon and...

  • Optical studies of very high-purity GaAs grown by metal-organic chemical-vapor deposition using.... van de Ziel, Jan P.; Xuefei Tang // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p791 

    Presents low-temperature photoluminescence studies of high-purity epitaxial gallium arsenide quantum wells. Use of on-site point-of-use arsine generator in the metal-organic chemical-vapor deposition (MOCVD) growth process; Safety of the MOCVD growth process; Implications for photodetectors and...

  • Photoluminescence spectra of MOCVD-grown P-doped GaAS/Al[sub x] Ga[sub 1-x] As MQW. Adelabu, J. S. A. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 1, p83 

    PhotoLuminescence (PL) measurement techniques have been used to investigate on MOCVD grown P-doped GaAs/Al[sub x] Ga[sub 1-x] As (x=0.3) Multiple Quantum Wells (MQW). The spectra reveal extrinsic luminescence characteristics of e–A[sup 0] transitions for interface and centre of well...

  • Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic.... Omnes, F.; Razeghi, M. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1034 

    Examines the photoluminescence of GaAs-Ga[sub 0.51]In[sub 0.49]P lattice matched quantum wells and superlattices grown by metalorganic chemical vapor deposition. Attribution of the sharp peaks during excitation to electron transitions; Indium-induced memory effect at the GaInP-GaAs interface.

  • Light emission from a silicon quantum well. Steigmeier, E. F.; Morf, R.; Gru¨tzmacher, D.; Auderset, H.; Delley, B.; Wessicken, R. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4165 

    We compare the photoluminescence (PL) properties of silicon (Si) single quantum well structures, consisting of an either amorphous or crystalline Si layer of 3 nm thickness, embedded between silicon–nitride layers. These structures are grown by plasma-enhanced chemical vapor deposition on...

  • “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells. Cho, Yong-Hoon; Gainer, G. H.; Fischer, A. J.; Song, J. J.; Keller, S.; Mishra, U. K.; DenBaars, S. P. // Applied Physics Letters;9/7/1998, Vol. 73 Issue 10 

    We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped...

  • Properties of the quantum wires grown on V-grooved Al[sub 0.3]Ga[sub 0.7]As/GaAs substrate by.... Min-Suk Lee; Yong Kim // Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3052 

    Examines the growth of quantum wires on vanadium-grooved aluminum gallium arsenide/gallium arsenide substrates through metalorganic chemical vapor deposition. Study of samples through photoluminescence spectra; Formation of necking area in quantum wells; Reduction of the lateral width of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics