Different behavior of photoluminescence anisotropy in porous silicon layers made by polarized-light-assisted electrochemical etching

Koyama, Hideki
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p965
Academic Journal
Luminescent porous silicon (PSi) layers have been made on n-type Si wafers by anodization in a HF solution under illumination with linearly polarized light. It is observed that the photoluminescence from samples anodized at a current density of 30 mA/cm[sup 2] and slightly oxidized electrochemically for passivation exhibits a significant anisotropy in polarization memory (PM): the degree of PM becomes maximum when the vector electric field (E[sub exc]) of excitation laser light is parallel to that (E[sub etch]) of the light used during anodization, and minimum when E[sub exc] is perpendicular to E[sub etch]. These maxima and minima are in totally different directions from those reported previously. In addition, the anisotropy is found to be weak at low anodization current density of 2.3 mA/cm[sup 2]. These experimental results are discussed based on the electrochemical, rather than photochemical, thinning of Si-nanocrystal assemblies in PSi layers. © 2002 American Institute of Physics.


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