Improved thermal stability of wet-oxidized AlAs

Jia, H. Q.; Chen, H.; Wang, W. C.; Wang, W. X.; Li, W.; Huang, Q.; Zhou, Junming; Xue, Q. K.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p974
Academic Journal
Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As[sub 2]O[sub 3], as evidenced by the Raman spectroscopy measurement. © 2002 American Institute of Physics.


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