TITLE

Improved thermal stability of wet-oxidized AlAs

AUTHOR(S)
Jia, H. Q.; Chen, H.; Wang, W. C.; Wang, W. X.; Li, W.; Huang, Q.; Zhou, Junming; Xue, Q. K.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p974
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Lateral thermal wet oxidization of the AlAs layer in a GaAs/AlAs/GaAs sandwiched structure is studied by Raman spectroscopy and Nomarski microscopy. A significant improvement in thermal stability of the oxidized AlAs layer has been achieved by optimizing the oxidation conditions, which can be used to fabricate reliable devices. We show that the thermal stability is strongly related to the removal of volatile products, such as As and As[sub 2]O[sub 3], as evidenced by the Raman spectroscopy measurement. © 2002 American Institute of Physics.
ACCESSION #
6005415

 

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