TITLE

Ohmic contacts to p-type GaN mediated by polarization fields in thin In[sub x]Ga[sub 1-x]N capping layers

AUTHOR(S)
Gessmann, T.; Li, Y.-L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, J. K.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p986
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability through the barrier and a significant decrease of the specific contact resistance. The specific contact resistance of Ni (10 nm)/Au (30 nm) contacts deposited on the InGaN capping layers was determined by the transmission line method. Specific contact resistances of 1.2×10[sup -2] Ω cm[sup 2] and 6×10[sup -3] Ω cm[sup 2] were obtained for capping layer thicknesses of 20 nm and 2 nm, respectively. © 2002 American Institute of Physics.
ACCESSION #
6005411

 

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