TITLE

Near-field photoluminescence spectroscopy of InGaN films grown by molecular-beam epitaxy

AUTHOR(S)
Kim, Jeongyong; Samiee, Kevan; White, Jeffrey O.; Myoung, Jae-Min; Kim, Kyekyoon
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p989
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The spatial and spectral distribution of photoluminescence from InGaN films grown by plasma-assisted molecular-beam epitaxy are studied by near-field scanning optical microscopy. The luminescence intensity is low in the vicinity of pits in the surface that are believed to be associated with dislocations. For 20% In, the emission is random on a submicron length scale, but clumps into micron-sized regions at 27% In. The clustering is quantified by calculating the image entropy. Near-field spectra indicate that the regions of high intensity are not due to a local increase in In. Spatial variations in the luminescence wavelength indicate that composition fluctuations are enhanced with increasing In. © 2002 American Institute of Physics.
ACCESSION #
6005410

 

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