Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures

Qiao, D.; Yu, L. S.; Jia, L.; Asbeck, P. M.; Lau, S. S.; Haynes, T. E.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p992
Academic Journal
The transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructure field-effect transistors have been investigated. We found that carrier transport across the AlGaN barrier layer is dominated by the tunneling of electrons that originate from the two-dimensional electron gas located at the AlGaN/GaN interface. The observed temperature dependence of the specific contact resistivity is different from that of the contact on highly doped bulk semiconductors, although tunneling current dominates the carrier transport in both cases. © 2002 American Institute of Physics.


Related Articles

  • Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices. Yu, E. T.; Collins, D. A.; Ting, D. Z.-Y.; Chow, D. H.; McGill, T. C. // Applied Physics Letters;12/17/1990, Vol. 57 Issue 25, p2675 

    We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously...

  • The specific contact resistance of Ohmic contacts to HgTe/Hg1-xCdxTe heterostructures. Leech, Patrick W. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p907 

    Presents a study which measured the specific contact resistance of Ohmic contacts to HgTe/Hg[sub1-x]Cd[subx]Te heterostructures. Use of a transmission line model; Comparative measurments of metal junctions; Characteristics of the heterostructures.

  • V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures. Schweitz, K. O.; Wang, P. K.; Mohney, S. E.; Gotthold, D. // Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1954 

    A study of V/Al/Pt/Au and Ti/Al/Pt/Au contacts to n-Al[sub 0.3]Ga[sub 0.7]N/GaN heterostructures is presented. Vanadium was chosen as a potential replacement for Ti because V is expected to form a thermally stable nitride with a low work function. Low-resistance Ohmic contacts are achieved with...

  • Ohmic contacts to p-type GaN mediated by polarization fields in thin In[sub x]Ga[sub 1-x]N capping layers. Gessmann, T.; Li, Y.-L.; Waldron, E. L.; Graff, J. W.; Schubert, E. F.; Sheu, J. K. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p986 

    Low-resistance ohmic contacts are demonstrated using thin p-type InGaN layers on p-type GaN. It is shown that the tunneling barrier width is drastically reduced by polarization-induced electric fields in the strained InGaN capping layers resulting in an increase of the hole tunneling probability...

  • Electrical properties of PdGe ohmic contacts to GaAs/Al[sub x]Ga[sub 1-x]As heterostructures at liquid helium temperature. Morozov, S. V.; Dubrovskii, Yu. V.; Abrosimova, V. N.; Wu¨rfl, J. // Applied Physics Letters;6/1/1998, Vol. 72 Issue 22 

    Nonlinear features in the electrical behavior of PdGe-based sintered ohmic contacts to the GaAs/Al[sub x]Ga[sub 1-x]As heterostructures with two-dimensional electron gas (2DEG) were investigated both in magnetic field and at the liquid helium temperature. It was shown that current flow under the...

  • Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN. Kumar, V.; Zhou, L.; Selvanathan, D.; Adesida, I. // Journal of Applied Physics;8/1/2002, Vol. 92 Issue 3, p1712 

    A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to n-GaN. Excellent ohmic characteristics with a specific contact resistivity as low as 4.7 × 10[sup -7] Ω-cm² were obtained by rapid thermal...

  • Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing. Katz, A.; Abernathy, C. R.; Pearton, S. J. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1028 

    Increasing the concentration of the carbon dopants in p-GaAs layers grown on semi-insulating substrates to levels of 1×1020 to 5×1020 cm-3 enables the formation of an ohmic contact with low resistance using the refractory Pt/Ti metallization. These contacts showed ohmic behavior prior to...

  • Electrical properties of Pt contacts on p-GaN activated in air. Yow-Jon Lin; Kuo-Chen Wu, Y. // Applied Physics Letters;3/1/2004, Vol. 84 Issue 9, p1501 

    In this study, the electrical properties of Pt contacts on p-type GaN (p-GaN) activated in air were investigated. From the observed photoluminescence result, it is suggested that the hydrogenated Ga vacancies (i.e., V[sub Ga]H[sub 2]) were formed during the activation process. However, V[sub...

  • Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching. Wang, Liang; Kim, Dong-Hyun; Adesida, Ilesanmi // Applied Physics Letters;10/26/2009, Vol. 95 Issue 17, p172107 

    The effects of recess etching of the Ohmic contact area on the performance of Ti/Al/Mo/Au metallization and its interfacial reactions with AlGaN/AlN/GaN epilayers were investigated. The best Ohmic contact performances of 0.31, 0.41, and 0.26 Ω mm for three epilayers from two different sources...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics