TITLE

Electronic characterization of n-ScN/p[sup +] Si heterojunctions

AUTHOR(S)
Perjeru, F.; Bai, X.; Kordesch, M. E.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p995
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p[sup +] Si substrates. Current–voltage and capacitance–voltage measurements indicate that the built-in voltages for the heterojunctions used in this study are approximately 1.74 and 0.40 eV, as seen by electrons and holes. Deep level transient spectroscopy results show the presence of an electronic trap with activation energy E[sub C]-E[sub T]=0.51 eV. The trap has a higher concentration (1.2–1.6×10[sup 13] cm[sup -3]) closer to the ScN/Si interface. © 2002 American Institute of Physics.
ACCESSION #
6005408

 

Related Articles

  • An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition. Yamamoto, Norio; Uwai, Kunihiko; Takahei, Kenichiro // Journal of Applied Physics;4/15/1989, Vol. 65 Issue 8, p3072 

    Presents a study that measured deep levels in high-purity indium phosphide (InP) crystals grown by metalorganic chemical vapor deposition (MOCVD) using deep level transient spectroscopy. Analysis of the formation of electron traps; Comparison of the annealing behavior of the electron trap in...

  • Cathodoluminescence mapping, deep-level transient spectroscopy, and electron-beam-induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition. Papadopoulo, A. C.; Bresse, J. F.; Legros, R.; Azoulay, R.; Draidia, N.; Gao, Y. // Journal of Applied Physics;10/15/1989, Vol. 66 Issue 8, p3831 

    Presents a study that characterized the growth of gallium arsenide layers on silicon substrates by metalorganic chemical vapor deposition. Analysis of the cathodoluminscence of the samples; Evaluation of the current-voltage characteristics of the samples; Examination of the deep-level transient...

  • Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing. Jorio, A.; Carlone, C.; Parenteau, M.; Aktik, C.; Rowell, N. L. // Journal of Applied Physics;8/1/1996, Vol. 80 Issue 3, p1364 

    Reports on the effect of annealing in an irradiated gallium arsenide. Use of deep level transient spectroscopy and photoluminescence spectroscopy in studying gallium arsenide which was grown by metallorganic chemical vapor deposition; Experimental details; Conclusion of the study.

  • Effects of growth temperature on optical and deep level spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition. Pudensi, M. A. A.; Mohammed, K.; Merz, J. L.; Kasemset, D.; Hess, K. L. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2788 

    Investigates the effect of growth temperature using photoluminescence and deep level transient spectroscopy of high-quality InP grown by metalorganic chemical vapor deposition. Relationship between deep level transient spectroscopy and acceptor concentrations; Observations on several electron...

  • New metastable defects in GaAs. Buchwald, W. R.; Johnson, N. M.; Trombetta, L. P. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p1007 

    Two previously unreported metastable defects in n-type GaAs epitaxial layers grown by metalorganic chemical vapor deposition have been identified by deep level transient spectroscopy. These levels, here labeled M3 and M4, have activation energies for thermal emission of electrons of 0.31 and...

  • Observation of multiple defect states at silicon--silicon nitride interfaces fabricated by.... Schmidt, Jan; Schuurmans, Frank M. // Applied Physics Letters;7/14/1997, Vol. 71 Issue 2, p252 

    Presents energy-dependent densities of specific defects at the silicon-plasma silicon nitride interface and corresponding cross sections. Fabrication of silicon nitride by low-frequency plasma-enhanced chemical vapor deposition; Detection of defect types using small-pulse deep-level transient...

  • Electron traps in beta-SiC grown by chemical vapor deposition on silicon (100) substrates. Zekentes, K.; Kayiambaki, M. // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3015 

    Investigates the deep levels of electron traps in chemical vapor deposition-grown heteroepitaxial beta-silicon carbide on silicon substrates. Use of deep level transient spectroscopy for surface treatments; Detection of traps below the conduction-band minimum; Comparison with theoretically...

  • Deep level defects in n-type GaN. Gotz, W.; Johnson, N.M.; Amano, H.; Akasaki, I. // Applied Physics Letters;7/25/1994, Vol. 65 Issue 4, p463 

    Examines the deep level defects in n-type GaN semiconductors grown by metalorganic chemical vapor deposition. Use of deep level transient spectroscopy; Evaluation of Schottky-barrier diodes and Ohmic contacts fabricated in the materials; Thermal activation energies displayed.

  • Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing. Negoro, Y.; Kimoto, T.; Matsunami, H. // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1716 

    N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics