Electronic characterization of n-ScN/p[sup +] Si heterojunctions

Perjeru, F.; Bai, X.; Kordesch, M. E.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p995
Academic Journal
We report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p[sup +] Si substrates. Current–voltage and capacitance–voltage measurements indicate that the built-in voltages for the heterojunctions used in this study are approximately 1.74 and 0.40 eV, as seen by electrons and holes. Deep level transient spectroscopy results show the presence of an electronic trap with activation energy E[sub C]-E[sub T]=0.51 eV. The trap has a higher concentration (1.2–1.6×10[sup 13] cm[sup -3]) closer to the ScN/Si interface. © 2002 American Institute of Physics.


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