Scattering of the charge carriers by ordered arrays of defect pairs in ternary chalcopyrite semiconductors

Rinco´n, C.; Wasim, S. M.; Marı´n, G.
February 2002
Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p998
Academic Journal
The electrical properties of CuIn[sub 3]Se[sub 5], CuGa[sub 3]Te[sub 5], and CuIn[sub 3]Te[sub 5] that contain arrays of donor–acceptor defect pairs (DADPs) in the lattice structure are studied. An expression for the scattering of the charge carriers with the DADPs, calculated from simple first principles, is proposed. This, when combined with other well-established mechanisms, explains the temperature dependence of the relatively low carrier mobility in these compounds in the activation regime very well. © 2002 American Institute of Physics.


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