Tetrahedral amorphous-carbon thin films for silicon-on-insulator application

Song, Z. R.; Yu, Y. H.; Li, C. L.; Zou, S. C.; Zhang, F. M.; Wang, X.; Shen, D. S.; Luo, E. Z.; Sundaravel, B.; Wong, S. P.; Wilson, I. H.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p743
Academic Journal
The application of a silicon-on-insulator substrate in a high-power integrated circuit is limited by the self-heating effect, caused by the poor thermal conductivity of the buried SiO[sub 2]. We introduce tetrahedral amorphous-carbon thin films, formed by the filtered arc deposition method, as an alteration. We investigated the surface morphology, microstructure, and electrical properties of these films. The films deposited under a substrate bias of -200 V displayed outstanding surface topography (low surface roughness with the R[sub rms] value under 0.5 nm) and excellent electrical property (breakdown field of 4.7 MV/cm). The film has a high content of sp[sup 3] bonds of carbon (87%) and low content of oxygen (<2%). © 2002 American Institute of Physics.


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