Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

Liu, J. Q.; Skowronski, M.; Hallin, C.; So¨derholm, R.; Lendenmann, H.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p749
Academic Journal
The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p–n[sup -] diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 10[sup 3] and 10[sup 4] cm[sup -1]. All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3<1–100>-type. © 2001 American Institute of Physics.


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