Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Vehse, M.; Michler, P.; Go¨sling, I.; Ro¨we, M.; Gutowski, J.; Bader, S.; Lell, A.; Bru¨derl, G.; Ha¨rle, V.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p755
Academic Journal
Using temperature-dependent and gain measurements, we have examined the laser threshold density of (In,Ga)N/GaN/(Al,Ga)N laser structures with various well widths and different In contents in the active layer. Thermal activation energies, obtained by temperature-dependent photoluminescence measurements at low excitation densities, yield information on the nonradiative recombination channels and demonstrate the existence of two different activation processes. One of them may be related to thermal activation of localized carriers into quasifree states and subsequent nonradiative recombination. The other is attributed to thermal emission of carriers into the barriers. The influence of the barrier height is also reflected by the dependence of the threshold densities required on the temperature. © 2002 American Institute of Physics.


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