TITLE

Direct determination of atomic structure in multiple quantum wells InGaN/GaN

AUTHOR(S)
Watanabe, K.; Yang, Jer-Ren; Nakanishi, N.; Inoke, K.; Shiojiri, M.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p761
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present an analysis of a homogeneous cellular interface between ultrathin InGaN and GaN layers in a high-resolution high-angle annular dark field scanning transmission electron microscopy image processed by the deconvolution technique. The method provides high-quality atomic-resolved images uniquely from the experimental images without preassumed models and image simulations. The processed image, then, shows definitely the position of interface between InGaN and GaN layers at atomic scale and an evidence of coherent epitaxial growth. © 2002 American Institute of Physics.
ACCESSION #
5985810

 

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