Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures

Guha, Supratik; Bojarczuk, Nestor A.; Narayanan, Vijay
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p766
Academic Journal
We demonstrate a ternary (La[sub x]Y[sub 1-x])[sub 2]O[sub 3] thin-film oxide that can be grown epitaxially on Si(111) substrates with a lattice constant that can be matched to twice the lattice constant of silicon. We further show that silicon can then be deposited epitaxially (though with a high defect density) on this oxide such that epitaxial silicon/oxide/silicon structures may be grown. We discuss the microstructural relationships and the growth modes for the oxide on silicon and silicon on oxide growths. © 2002 American Institute of Physics.


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