TITLE

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

AUTHOR(S)
Tabata, A.; Teles, L. K.; Scolfaro, L. M. R.; Leite, J. R.; Kharchenko, A.; Frey, T.; As, D. J.; Schikora, D.; Lischka, K.; Furthmu¨ller, J.; Bechstedt, F.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p769
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Phase separation suppression due to external biaxial strain is observed in In[sub x]Ga[sub 1-x]N alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the In[sub x]Ga[sub 1-x]N layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. © 2002 American Institute of Physics.
ACCESSION #
5985806

 

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