Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Tabata, A.; Teles, L. K.; Scolfaro, L. M. R.; Leite, J. R.; Kharchenko, A.; Frey, T.; As, D. J.; Schikora, D.; Lischka, K.; Furthmu¨ller, J.; Bechstedt, F.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p769
Academic Journal
Phase separation suppression due to external biaxial strain is observed in In[sub x]Ga[sub 1-x]N alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the In[sub x]Ga[sub 1-x]N layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. © 2002 American Institute of Physics.


Related Articles

  • Strain Effects on Optical Properties of (In,Ga) As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate. Saidi, Faouzi; Bennour, Mouna; Bouzaïene, Lotfi; Sfaxi, Larbi; Maaref, Hassen // International Journal of Spectroscopy;2011, p1 

    We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due...

  • Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors. Yang, X.-F.; Chen, X.-S.; Lu, W.; Fu, Y. // Nanoscale Research Letters;Dec2008, Vol. 3 Issue 12, p534 

    We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs). The strain distribution of three different shaped quantum dots (QDs) with a same ratio of the base to the vertical aspect is calculated by using the...

  • Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductors. Loechelt, G.H.; Cave, N.G. // Journal of Applied Physics;12/1/1999, Vol. 86 Issue 11, p6164 

    Focuses on a study which illustrated the development of polarized off-axis Raman spectroscopy for measuring the complete tensor nature of stress fields in semiconductors. Fundamental theory of the Raman spectroscopy; Calculation and formulation of shifted phonon frequencies of the Raman...

  • Insight into optical properties of strain-free quantum dot pairs. Wu, Jiang; Wang, Zhiming; Dorogan, Vitaliy; Mazur, Yuriy; Li, Shibin; Salamo, Gregory // Journal of Nanoparticle Research;Mar2011, Vol. 13 Issue 3, p947 

    Self-assembled GaAs/AlGaAs quantum dot pairs (QDPs) are grown by molecular beam epitaxy using high temperature droplet epitaxy technique. A typical QDP consists of dual-size quantum dots as observed based on atomic force microscopy image. The average height of quantum dot is 5.7 nm for the large...

  • Strain and Intermixing in Single Ge/Si Quantum Dots Observed by Tip-enhanced Raman Spectroscopy. Toizumi, T.; Yuasa, Y.; Ogawa, Y.; Katayama, K.; Minami, F.; Baranov, A. V. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p553 

    Tip-enhanced Raman spectra of as-grown self-assembled Ge/Si quantum dots have been observed with nano-scale spatial resolution. It is found that the Ge-Ge and Si-Ge modes in the Raman spectra were significantly enhanced only when the tip was on the Ge/Si dots. The Ge content in a single dot was...

  • Strain induced optical gain in a ZnxCd1-xTe/ZnTe quantum dot nanostructure. Sangeetha, R.; Peter, A. John // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p1014 

    Heavy hole exciton binding energies, in a strained ZnxCd1-xTe/ZnTe quantum dot nanostructure, are investigated taking into account the geometrical confinement and the built-in electric fields. The effects of strain due to the hydrostatic and the biaxial strain are included in the Hamiltonian....

  • Influence of the substrate orientation on the electronic and optical properties of InAs/GaAs quantum dots. Mlinar, V.; Peeters, F. M. // Applied Physics Letters;12/25/2006, Vol. 89 Issue 26, p261910 

    Using three-dimensional k·p calculation including strain and piezoelectricity the authors predict the variation of electronic and optical properties of InAs/GaAs quantum dots (QDs) with the substrate orientation. The QD transition energies are obtained for high index substrates, [11k] where...

  • Vibrational, elastic, and structural properties of cubic silicon carbide under pressure up to 75 GPa: Implication for a primary pressure scale. Zhuravlev, K. K.; Goncharov, Alexander F.; Tkachev, S. N.; Dera, P.; Prakapenka, V. B. // Journal of Applied Physics;Mar2013, Vol. 113 Issue 11, p113503 

    We present results of concomitant measurements of synchrotron x-ray diffraction (XRD), Brillouin, and Raman spectroscopy on the single crystal samples of cubic silicon carbide (3C-SiC) under quasi-hydrostatic pressures up to 65 GPa, as well as x-ray diffraction and Raman spectroscopy up to 75...

  • INFLUENCE OF ANNEALING ON STRUCTURAL AND OPTICAL PROPERTIES OF GERMANIUM QUANTUM DOTS. Samavati, Alireza; Ghoshal, Sib Krishna; Othaman, Zulkafli // Journal of Ovonic Research;Mar/Apr2012, Vol. 8 Issue 2, p21 

    Ge nanodots are grown on a Si(100) substrate by radio frequency magnetron sputtering deposition technique. The role of annealing temperature on structural and optical properties is studied. The formation of nanodots is confirmed by X-ray diffraction pattern and the particle size is estimated to...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics