Accurate control of the misorientation angles in direct wafer bonding

Fournel, Frank; Moriceau, Hubert; Aspar, Bernard; Rousseau, Karine; Eymery, Joe¨l; Rouvie`re, Jean-Luc; Magnea, Noe¨l
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p793
Academic Journal
A direct wafer bonding process has been developed to accurately control both the bonding interface twist and tilt angles between a monocrystalline layer and a bare monocrystalline wafer. This process is based on the bonding of twin surfaces produced by splitting a single wafer, using for instance the Smart Cut® process. A targeted control of ±0.005° is obtained for the twist angle without any crystallographic measurement. Moreover, pure twist-bonded interfaces have been artificially made between two (001) bonded silicon surfaces. © 2002 American Institute of Physics.


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