Nitrogen-induced enhancement of the electron effective mass in InN[sub x]As[sub 1-x]

Hung, W. K.; Cho, K. S.; Chern, M. Y.; Chen, Y. F.; Shih, D. K.; Lin, H. H.; Lu, C. C.; Yang, T. R.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p796
Academic Journal
The electron effective mass in n-type InN[sub x]As[sub 1-x] (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the “universality” of the BAC model. © 2002 American Institute of Physics.


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