TITLE

Nitrogen-induced enhancement of the electron effective mass in InN[sub x]As[sub 1-x]

AUTHOR(S)
Hung, W. K.; Cho, K. S.; Chern, M. Y.; Chen, Y. F.; Shih, D. K.; Lin, H. H.; Lu, C. C.; Yang, T. R.
PUB. DATE
February 2002
SOURCE
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p796
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electron effective mass in n-type InN[sub x]As[sub 1-x] (with x up to 3.0%) grown by gas-source molecular-beam epitaxy was obtained from infrared reflectivity and Hall-effect measurements. The large increase of the effective mass due to the incorporation of nitrogen is attributed mainly to the nitrogen-induced modification on the electronic states near the conduction-band edge. The well-known band anticrossing (BAC) model for the electronic structure of the III-N-V alloys cannot well describe the experimental data, especially in the region of higher electron concentration. This result provides an opportunity to examine the “universality” of the BAC model. © 2002 American Institute of Physics.
ACCESSION #
5985797

 

Related Articles

  • A Study of Galvanomagnetic Phenomena in MBE-Grown n-Cd[sub x]Hg[sub 1 � ][sub x]Te Films. Varavin, V. S.; Kravchenko, A. F.; Sidorov, Yu. G. // Semiconductors;Sep2001, Vol. 35 Issue 9, p992 

    The magnetic-field dependences of the Hall coefficient and the conductivity of n-type Cd[sub x]Hg[sub 1-x]Te epitaxial structures were measured at 77 K. The structures were grown by molecular-beam epitaxy with a prescribed solid solution composition profile across the thickness. A specific...

  • Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates. Kalem, Ş.; Chyi, J.; Litton, C. W.; Morkoç, H.; Kan, S. C.; Yariv, A. // Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p562 

    InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in...

  • Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy. Kim[a], D. J.; Ryu, D. Y.; Bojarczuk, N. A.; Karasinski, J.; Guha, S.; Lee, S. H.; Lee, J. H. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2564 

    Studies the thermal activation energies of magnesium in GaN:Mg measured by the Hall effect and admittance spectroscopy. Growing of a series of GaN:Mg structures in molecular beam epitaxy using either one or two radio frequency nitrogen sources; Reasons for the apparently small acceptor energies...

  • A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxy. Lee, M. E.; Poole, I.; Truscott, W. S.; Cleverley, I. R.; Singer, K. E.; Rohlfing, D. M. // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p131 

    Deals with a study which detailed the Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular beam epitaxy. Methodology of the study; Results and discussion.

  • Annealing dynamics of molecular-beam epitaxial GaAs grown at 200 °C. Look, D. C.; Walters, D. C.; Robinson, G. D.; Sizelove, J. R.; Mier, M. G.; Stutz, C. E. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p306 

    Investigates the annealing dynamics of molecular-beam epitaxial gallium arsenide grown at 200 °C. Details of Hall-effect measurements and analysis; Results of absorption analysis; Factor which allows an annealing model to be formulated.

  • The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy. Yu, Zhonghai; Buczkowski, S. L.; Giles, N. C.; Myers, T. H.; Richards-Babb, M. R. // Applied Physics Letters;10/28/1996, Vol. 69 Issue 18, p2731 

    GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium-rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x-ray diffraction measurements. Atomic hydrogen has a...

  • Shubnikov–de Haas effect in thin epitaxial films of gray tin. Tu, L. W.; Wong, G. K.; Song, S. N.; Zhao, Z.; Ketterson, J. B. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2643 

    The transverse magnetoresistance and Hall effect have been studied for n-type gray tin epilayers grown on (001)CdTe substrates by the molecular beam epitaxy technique. Shubnikov–de Haas oscillations were observed in samples having Hall mobilities ≥104 cm2 /V s at low temperatures....

  • Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400 degrees C. Look, D.C.; Robinson, G.D.; Sizelove, J.R.; Stutz, C.E. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p3004 

    Presents the Hall effect measurements on gallium arsenide semiconductors grown at low temperatures by molecular beam epitaxy. Analysis on the capped, conductive layers of the structure; Determination of the donor and acceptor concentration and activation energy in the materials.

  • Modulation doping and observation of the integral quantum Hall effect in.... Springholz, G.; Ihninger, G.; Bauer, G.; Olver, M.M.; Pastalan, J.Z.; Romaine, S.; Goldberg, B.B. // Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2908 

    Examines the electronic properties of PbTe/Pb[sub 1-x]Eu[sub x]Te multiple quantum wells grown by molecular beam epitaxy. Reduction of electron mobility with increasing Eu content; Integral quantum Hall effect; Resolution of spin splitting.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics